Photoluminescence of nitrogen-doped zinc selenide by photo-assisted MOCVD
Date
Authors
Journal Title
Journal ISSN
Volume Title
Publisher
Abstract
Zinc selenide is a wide band-gap (2.67 eV) II-VI compound semiconductor with potential use as a blue electro-optic device material. Problems with obtaining suitable p-type conductivity have limited device development. Zinc selenide epitaxial films, doped with nitrogen from NH
Description
Advisor
Degree
Type
Keywords
Citation
Gillespie, Paul Matthew. "Photoluminescence of nitrogen-doped zinc selenide by photo-assisted MOCVD." (1993) Diss., Rice University. https://hdl.handle.net/1911/16623.