Ultrahigh Resolution Lithography with Excimer Lasers

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dc.citation.conferenceDate1995en_US
dc.citation.conferenceNameNATO Workshop on Gas Lasers - Recent Developments and Future Prospectsen_US
dc.citation.firstpage263en_US
dc.citation.lastpage272en_US
dc.citation.locationMoscow, Russiaen_US
dc.contributor.authorTittel, Frank K.en_US
dc.contributor.authorErdelyi, Miklosen_US
dc.contributor.authorSengupta, Chaitalien_US
dc.contributor.authorBor, Zsolten_US
dc.contributor.authorSzabo, Gaboren_US
dc.contributor.authorCavallaro, Joseph R.en_US
dc.contributor.authorSmayling, Michael C.en_US
dc.contributor.authorWilson, William L.en_US
dc.contributor.orgCenter for Multimedia Communicationen_US
dc.date.accessioned2012-06-21T20:57:26Zen_US
dc.date.available2012-06-21T20:57:26Zen_US
dc.date.issued1995-07-01en_US
dc.description.abstractThe photolithography process is central to integrated circuit fabrication. Through this process an integrated circuit is patterned by imaging a photomask onto a layer of photoresist. The light source currently being used by the semiconductor industry in the photolithography process for 0.35 micron feature size is the mercury lamp. As the feature size for integrated circuits moves below 0.35 microns, a new source of shorter wavelength light and higher power must be found to replace the mercury lamp.en_US
dc.description.sponsorshipNational Science Foundationen_US
dc.identifier.citationF. K. Tittel, M. Erdelyi, C. Sengupta, Z. Bor, G. Szabo, J. R. Cavallaro, M. C. Smayling and W. L. Wilson, "Ultrahigh Resolution Lithography with Excimer Lasers," 1995.en_US
dc.identifier.urihttps://hdl.handle.net/1911/64288en_US
dc.language.isoengen_US
dc.publisherKluwer Academic Publishersen_US
dc.subjectPhotolithographyen_US
dc.subjectFeature sizeen_US
dc.subjectPhotoresisten_US
dc.subjectExcimer laseren_US
dc.titleUltrahigh Resolution Lithography with Excimer Lasersen_US
dc.typeConference paperen_US
dc.type.dcmiTexten_US
dc.type.dcmiTexten_US
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