Polarization reversal in thin film lithium niobate on silicon

Date
1990
Journal Title
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Volume Title
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Abstract

The spontaneous polarization of thin film LiNbO\sb3 has been shown to be reversible with the application of an electric field at room temperature. This electric field is applied across the sample in the form of a voltage pulse, and polarization reversal is detected either as a photocurrent reversal, or as a current transient whose integrated area is proportional to the spontaneous polarization. For 80 mil\sp2 size areas of thickness.3 μm, the fastest switching speed was 500 ns. The samples consisted of a silicon substrate, a thin film of LiNbO\sb3 and a metal contact to form an MFS (metalferroelectric-semiconductor) structure. The LiNbO\sb3 film was formed by rf sputtering LiNbO\sb3 onto heated ⟨111⟩ silicon substrates.

Description
Degree
Master of Science
Type
Thesis
Keywords
Electronics, Electrical engineering, Condensed matter physics
Citation

Rost, Timothy Alan. "Polarization reversal in thin film lithium niobate on silicon." (1990) Master’s Thesis, Rice University. https://hdl.handle.net/1911/13463.

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