Enhanced Microlithography Using Combined Phase Shifting and Off-axis Illumination

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dc.citation.firstpageL1629en_US
dc.citation.issueNumber12Aen_US
dc.citation.journalTitleJapanese Journal of Applied Physicsen_US
dc.citation.lastpageL1631en_US
dc.citation.volumeNumber34en_US
dc.contributor.authorErdelyi, Miklosen_US
dc.contributor.authorBor, Zsolten_US
dc.contributor.authorCavallaro, Joseph R.en_US
dc.contributor.authorSzabo, Gaboren_US
dc.contributor.authorWilson, William L.en_US
dc.contributor.authorSengupta, Chaitalien_US
dc.contributor.authorSmayling, Michael C.en_US
dc.contributor.authorTittel, Frank K.en_US
dc.contributor.orgCenter for Multimedia Communicationen_US
dc.date.accessioned2012-05-30T15:58:20Zen_US
dc.date.available2012-05-30T15:58:20Zen_US
dc.date.issued1995-12-01en_US
dc.description.abstractOff-axis illumination is a promising optical microlithography technique which can be used to improve the image quality of line-space patterns. With this method the image is produced by the zero and first order diffracted beams. Due to the intensity difference between these two order diffracted beams the contrast of the image cannot be unity. This paper demonstrates the optical enhancement that can be achieved by a combination of interferometric phase shifting and off-axis illumination. In such an arrangement the mask is illuminated symmetrically from both the front and back sides, and not two but in fact four–(two zero and two first)–order beams produce the image. We show experimentally that the contrast of the image can be improved if the phase difference between the reflected and transmitted beams is π, and the intensity of the transmitted beam is about 13% of the reflected beam. This improved quality image with feature sizes of 0.4 µm was recorded in a photoresist using an Ar+ ion laser operating at 457.9 nm.en_US
dc.description.sponsorshipNational Science Foundationen_US
dc.description.sponsorshipOTKA Foundation of the Hungarian Academy of Sciencesen_US
dc.identifier.citationM. Erdelyi, Z. Bor, J. R. Cavallaro, G. Szabo, W. L. Wilson, C. Sengupta, M. C. Smayling and F. K. Tittel, "Enhanced Microlithography Using Combined Phase Shifting and Off-axis Illumination," <i>Japanese Journal of Applied Physics,</i> vol. 34, no. 12A, 1995.en_US
dc.identifier.doihttp://dx.doi.org/10.1143/JJAP.34.L1629en_US
dc.identifier.issn10.1143/JJAP.34.L1629en_US
dc.identifier.otherhttp://scholar.google.com/scholar?cluster=10537488675807051316&hl=en&as_sdt=0,44en_US
dc.identifier.urihttps://hdl.handle.net/1911/64193en_US
dc.language.isoengen_US
dc.publisherJapanese Journal of Applied Physicsen_US
dc.subjectPhase shifting techniqueen_US
dc.subjectSubmicron microlithographyen_US
dc.subjectOff-axis illuminationen_US
dc.subjectInterferenceen_US
dc.titleEnhanced Microlithography Using Combined Phase Shifting and Off-axis Illuminationen_US
dc.typeJournal articleen_US
dc.type.dcmiTexten_US
dc.type.dcmiTexten_US
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