Graphene Ambipolar Multiplier Phase Detector

dc.citation.firstpage1328
dc.citation.issueNumber10en_US
dc.citation.journalTitleIEEE ELECTRON DEVICE LETTERSen_US
dc.citation.lastpage1330
dc.citation.volumeNumber32en_US
dc.contributor.authorYang, Xuebei
dc.contributor.authorLiu, Guanxiong
dc.contributor.authorRostami, Masoud
dc.contributor.authorBalandin, Alexander A.
dc.contributor.authorMohanram, Kartik
dc.date.accessioned2013-09-18T17:03:42Z
dc.date.available2013-09-18T17:03:42Z
dc.date.issued2011-10
dc.description.abstractWe report the experimental demonstration of a multiplier phase detector implemented with a single top-gated graphene transistor. Ambipolar current conduction in graphene transistors enables simplification of the design of the multiplier phase detector and reduces its complexity in comparison to phase detectors based on conventional unipolar transistors. Fabrication of top-gated graphene transistors is essential to achieve the higher gain necessary to demonstrate phase detection. We report a phase detector gain of −7 mV/rad in this letter. An analysis of key technological parameters of the graphene transistor, including series resistance, top-gate insulator thickness, and output resistance, indicates that the phase detector gain can be improved by as much as two orders of magnitude.en_US
dc.description.sponsorshipNSF CAREER Award CCF-0746850en_US
dc.identifier.citationX. Yang, G. Liu, M. Rostami, A. A. Balandin and K. Mohanram, "Graphene Ambipolar Multiplier Phase Detector," <i>IEEE ELECTRON DEVICE LETTERS,</i> vol. 32, no. 10, 2011.*
dc.identifier.doihttp://dx.doi.org/10.1109/LED.2011.2162576en_US
dc.identifier.urihttps://hdl.handle.net/1911/72092
dc.language.isoengen
dc.publisherIEEEen_US
dc.subjectAmbipolarityen_US
dc.subjectgrapheneen_US
dc.subjectgraphene field-effect transistoren_US
dc.subjectphase detectoren_US
dc.titleGraphene Ambipolar Multiplier Phase Detectoren_US
dc.typeJournal articleen_US
dc.type.dcmiTexten
dc.type.dcmiTexten_US
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