Semi-analytical model for carbon nanotube and graphene nanoribbon transistors

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dc.contributor.advisorMohanram, Kartik
dc.creatorYang, Xuebei
dc.date.accessioned2011-07-25T02:04:44Z
dc.date.available2011-07-25T02:04:44Z
dc.date.issued2010
dc.description.abstractCarbon nanotubes and graphene provide high carrier mobility for ballistic transport, high carrier velocity for fast switching, and excellent mechanical and thermal conductivity. As a result, they are widely considered as next generation candidate materials for nanoelectronics. In this thesis, I first propose a physics-based semi-analytical model for Schottky-barrier (SB) carbon nanotube (CNT) and graphene nanoribbon (GNR) transistors. The model reduces the computational complexity in the two critical but time-consuming steps, namely the calculation of the tunneling probability and the self-consistent evaluation of the surface potential in the transistor channel. Since SB-type CNT and GNR transistors exhibit ambipolar conduction that is not preferable in digital applications, I further propose a semi-analytical model for the double-gate transistor structure that is able to control the ambipolar conduction in-field. Future directions, including the modeling of new CNT and GNR devices and novel circuits based on the in-field controllability of ambipolar conduction, will also be described.
dc.format.mimetypeapplication/pdf
dc.identifier.callnoTHESIS E.E. 2010 YANG
dc.identifier.citationYang, Xuebei. "Semi-analytical model for carbon nanotube and graphene nanoribbon transistors." (2010) Master’s Thesis, Rice University. <a href="https://hdl.handle.net/1911/61975">https://hdl.handle.net/1911/61975</a>.
dc.identifier.urihttps://hdl.handle.net/1911/61975
dc.language.isoeng
dc.rightsCopyright is held by the author, unless otherwise indicated. Permission to reuse, publish, or reproduce the work beyond the bounds of fair use or other exemptions to copyright law must be obtained from the copyright holder.
dc.subjectElectronics
dc.subjectElectrical engineering
dc.titleSemi-analytical model for carbon nanotube and graphene nanoribbon transistors
dc.typeThesis
dc.type.materialText
thesis.degree.departmentElectrical Engineering
thesis.degree.disciplineEngineering
thesis.degree.grantorRice University
thesis.degree.levelMasters
thesis.degree.nameMaster of Science
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