Semi-analytical model for carbon nanotube and graphene nanoribbon transistors

dc.contributor.advisorMohanram, Kartiken_US
dc.creatorYang, Xuebeien_US
dc.date.accessioned2011-07-25T02:04:44Zen_US
dc.date.available2011-07-25T02:04:44Zen_US
dc.date.issued2010en_US
dc.description.abstractCarbon nanotubes and graphene provide high carrier mobility for ballistic transport, high carrier velocity for fast switching, and excellent mechanical and thermal conductivity. As a result, they are widely considered as next generation candidate materials for nanoelectronics. In this thesis, I first propose a physics-based semi-analytical model for Schottky-barrier (SB) carbon nanotube (CNT) and graphene nanoribbon (GNR) transistors. The model reduces the computational complexity in the two critical but time-consuming steps, namely the calculation of the tunneling probability and the self-consistent evaluation of the surface potential in the transistor channel. Since SB-type CNT and GNR transistors exhibit ambipolar conduction that is not preferable in digital applications, I further propose a semi-analytical model for the double-gate transistor structure that is able to control the ambipolar conduction in-field. Future directions, including the modeling of new CNT and GNR devices and novel circuits based on the in-field controllability of ambipolar conduction, will also be described.en_US
dc.format.mimetypeapplication/pdfen_US
dc.identifier.callnoTHESIS E.E. 2010 YANGen_US
dc.identifier.citationYang, Xuebei. "Semi-analytical model for carbon nanotube and graphene nanoribbon transistors." (2010) Master’s Thesis, Rice University. <a href="https://hdl.handle.net/1911/61975">https://hdl.handle.net/1911/61975</a>.en_US
dc.identifier.urihttps://hdl.handle.net/1911/61975en_US
dc.language.isoengen_US
dc.rightsCopyright is held by the author, unless otherwise indicated. Permission to reuse, publish, or reproduce the work beyond the bounds of fair use or other exemptions to copyright law must be obtained from the copyright holder.en_US
dc.subjectElectronicsen_US
dc.subjectElectrical engineeringen_US
dc.titleSemi-analytical model for carbon nanotube and graphene nanoribbon transistorsen_US
dc.typeThesisen_US
dc.type.materialTexten_US
thesis.degree.departmentElectrical Engineeringen_US
thesis.degree.disciplineEngineeringen_US
thesis.degree.grantorRice Universityen_US
thesis.degree.levelMastersen_US
thesis.degree.nameMaster of Scienceen_US
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