Angular dependence of xenon Rydberg atom ionization at conducting and semiconducting surfaces

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dc.contributor.advisorDunning, F. B.en_US
dc.creatorDunham, Hardin R.en_US
dc.date.accessioned2009-06-03T19:56:22Zen_US
dc.date.available2009-06-03T19:56:22Zen_US
dc.date.issued2008en_US
dc.description.abstractIonization of xenon atoms excited to the lowest states in the n=17 and n=20 Stark manifolds at atomically flat Au(111) surfaces and at heavily-doped n-type and p-type Si(100) surfaces having robust native oxide layers is examined over a range of incident angles. Ionization is characterized by resonant surface ionization with contributions from local fields at the surface associated with surface charging or surface inhomogeneities. For oxidized semiconducting surfaces the local fields are a factor of two to three times larger than for conducting surfaces leading to markedly different results.en_US
dc.format.extent147 p.en_US
dc.format.mimetypeapplication/pdfen_US
dc.identifier.callnoTHESIS PHYS. 2008 DUNHAMen_US
dc.identifier.citationDunham, Hardin R.. "Angular dependence of xenon Rydberg atom ionization at conducting and semiconducting surfaces." (2008) Diss., Rice University. <a href="https://hdl.handle.net/1911/22171">https://hdl.handle.net/1911/22171</a>.en_US
dc.identifier.urihttps://hdl.handle.net/1911/22171en_US
dc.language.isoengen_US
dc.rightsCopyright is held by the author, unless otherwise indicated. Permission to reuse, publish, or reproduce the work beyond the bounds of fair use or other exemptions to copyright law must be obtained from the copyright holder.en_US
dc.subjectMolecular physicsen_US
dc.subjectAtomic physicsen_US
dc.subjectOpticsen_US
dc.titleAngular dependence of xenon Rydberg atom ionization at conducting and semiconducting surfacesen_US
dc.typeThesisen_US
dc.type.materialTexten_US
thesis.degree.departmentPhysicsen_US
thesis.degree.disciplineNatural Sciencesen_US
thesis.degree.grantorRice Universityen_US
thesis.degree.levelDoctoralen_US
thesis.degree.nameDoctor of Philosophyen_US
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