Angular dependence of xenon Rydberg atom ionization at conducting and semiconducting surfaces

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dc.contributor.advisorDunning, F. B.
dc.creatorDunham, Hardin R.
dc.date.accessioned2009-06-03T19:56:22Z
dc.date.available2009-06-03T19:56:22Z
dc.date.issued2008
dc.description.abstractIonization of xenon atoms excited to the lowest states in the n=17 and n=20 Stark manifolds at atomically flat Au(111) surfaces and at heavily-doped n-type and p-type Si(100) surfaces having robust native oxide layers is examined over a range of incident angles. Ionization is characterized by resonant surface ionization with contributions from local fields at the surface associated with surface charging or surface inhomogeneities. For oxidized semiconducting surfaces the local fields are a factor of two to three times larger than for conducting surfaces leading to markedly different results.
dc.format.extent147 p.en_US
dc.format.mimetypeapplication/pdf
dc.identifier.callnoTHESIS PHYS. 2008 DUNHAM
dc.identifier.citationDunham, Hardin R.. "Angular dependence of xenon Rydberg atom ionization at conducting and semiconducting surfaces." (2008) Diss., Rice University. <a href="https://hdl.handle.net/1911/22171">https://hdl.handle.net/1911/22171</a>.
dc.identifier.urihttps://hdl.handle.net/1911/22171
dc.language.isoeng
dc.rightsCopyright is held by the author, unless otherwise indicated. Permission to reuse, publish, or reproduce the work beyond the bounds of fair use or other exemptions to copyright law must be obtained from the copyright holder.
dc.subjectMolecular physics
dc.subjectAtomic physics
dc.subjectOptics
dc.titleAngular dependence of xenon Rydberg atom ionization at conducting and semiconducting surfaces
dc.typeThesis
dc.type.materialText
thesis.degree.departmentPhysics
thesis.degree.disciplineNatural Sciences
thesis.degree.grantorRice University
thesis.degree.levelDoctoral
thesis.degree.nameDoctor of Philosophy
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