A 120-GHz Power Amplifier in 45-nm SiGe

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dc.contributor.advisorChi, Taiyunen_US
dc.creatorMorrison, James Allenen_US
dc.date.accessioned2022-12-21T20:16:16Zen_US
dc.date.available2023-06-01T05:01:10Zen_US
dc.date.created2022-12en_US
dc.date.issued2022-12-02en_US
dc.date.submittedDecember 2022en_US
dc.date.updated2022-12-21T20:16:16Zen_US
dc.description.abstractAs 5G cellular technologies are in the deployment stage and 6G technology is entering the research arena, the need for more bandwidth allocation has led to the drastic increase in frequency that has crossed the threshold into the sub-terahertz (sub-THz) region. This spectrum allows for larger bandwidths, but also brings challenges for implementation due to the physical phenomenon associated with these EM (electromagnetic) waves. One challenge is to efficiently provide high output power for antennas on a single chip or as part of a larger IC (Integrated Circuit) [1]. This work evaluates a promising new SiGe (Silicon-Germanium) fabrication process that addresses the power generation issue by utilizing an HBT (hetero-junction bipolar transistor) that is half the size of the previous generation, but still has an appreciable supply voltage and offers the use of topologies that allow the voltage swing to remain high despite its smaller size. The main contributions of this paper are as follows: (a) The design flow used to evaluate this new process, (b) A chip design that evaluates the performance of the HBT in a 2-stage common-base differential amplifier configuration.en_US
dc.embargo.terms2023-06-01en_US
dc.format.mimetypeapplication/pdfen_US
dc.identifier.citationMorrison, James Allen. "A 120-GHz Power Amplifier in 45-nm SiGe." (2022) Master’s Thesis, Rice University. <a href="https://hdl.handle.net/1911/114180">https://hdl.handle.net/1911/114180</a>.en_US
dc.identifier.urihttps://hdl.handle.net/1911/114180en_US
dc.language.isoengen_US
dc.rightsCopyright is held by the author, unless otherwise indicated. Permission to reuse, publish, or reproduce the work beyond the bounds of fair use or other exemptions to copyright law must be obtained from the copyright holder.en_US
dc.subjectRFICen_US
dc.subjectPAen_US
dc.subjectSub-THzen_US
dc.subjectSiGeen_US
dc.titleA 120-GHz Power Amplifier in 45-nm SiGeen_US
dc.typeThesisen_US
dc.type.materialTexten_US
thesis.degree.departmentElectrical and Computer Engineeringen_US
thesis.degree.disciplineEngineeringen_US
thesis.degree.grantorRice Universityen_US
thesis.degree.levelMastersen_US
thesis.degree.nameMaster of Scienceen_US
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