2D Optoelectronics: Challenges and Opportunities

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dc.contributor.advisorAjayan, Pulickel M
dc.contributor.committeeMemberLou, Jun
dc.contributor.committeeMemberKono, Junichiro
dc.creatorLei, Sidong
dc.date.accessioned2016-01-11T20:05:57Z
dc.date.available2016-01-11T20:05:57Z
dc.date.created2016-05
dc.date.issued2015-12-17
dc.date.submittedMay 2016
dc.date.updated2016-01-11T20:05:58Z
dc.description.abstractIndium Selenide (InSe) is one of atomically layered 2D materials attracting broad interests recently, because of its good optoelectronic properties. Based on the challenges of 2D optoelectronics, several topics will be covered in this defense, such as trap states and low absorption rate. InSe is selected as a platform to study these topics. The localized states and trap states in InSe system was characterized through low temperature photocurrent measurement to reveal the evolution of band structure and origin of the localized states in few layered InSe. It is found the surface electron orbitals contribute to the localized states. By modifying the surface electron via metallic ions, the Fermi level can be tuned significantly and the inertia surface of the pristine 2D surface can be sensitized for functionalization. Via this method, the InSe photodetector can be improved by organic photosensitive molecules. On the other hand, local gating can induce trap states in 2D materials, helping to improve the photoresponse, but slowing down the response speed. By utilizing this effect, 2D charge coupled device can be fabricated to serve as flexible image sensor which can help correct the optical aberration. The discussion is based on InSe, however, the principle is very universal that can be easily apply to other 2D system. The research can help to promote the research and device development in 2D optoelectronics.
dc.format.mimetypeapplication/pdf
dc.identifier.citationLei, Sidong. "2D Optoelectronics: Challenges and Opportunities." (2015) Diss., Rice University. <a href="https://hdl.handle.net/1911/87810">https://hdl.handle.net/1911/87810</a>.
dc.identifier.urihttps://hdl.handle.net/1911/87810
dc.language.isoeng
dc.rightsCopyright is held by the author, unless otherwise indicated. Permission to reuse, publish, or reproduce the work beyond the bounds of fair use or other exemptions to copyright law must be obtained from the copyright holder.
dc.subjectImage Sensor
dc.subjectAvalanche Effect
dc.subjectTwo-dimensional Materials
dc.subjectLewis Acid-Base Coordination Complex
dc.subjectFermi Level Control
dc.title2D Optoelectronics: Challenges and Opportunities
dc.typeThesis
dc.type.materialText
thesis.degree.departmentApplied Physics
thesis.degree.disciplineNatural Sciences
thesis.degree.grantorRice University
thesis.degree.levelDoctoral
thesis.degree.majorAppl Phys/Materials Sci NanoEn
thesis.degree.nameDoctor of Philosophy
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