Resistive switching in silicon oxide-based systems

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dc.contributor.advisorNatelson, Douglasen_US
dc.creatorYao, Junen_US
dc.date.accessioned2011-07-25T02:06:24Zen_US
dc.date.available2011-07-25T02:06:24Zen_US
dc.date.issued2010en_US
dc.description.abstractVoltage-controlled resistive switching in various gap systems on SiO2 substrates is demonstrated. The nanosized gaps are made by several means using different materials including metals, semiconductors and amorphous carbon. The switching site is further reduced in size by using multi-walled carbon nanotubes and single-walled carbon nanotubes. The switching in all the gap systems shares the same characteristics. This independence of switching on the material compositions of the electrodes, accompanied by observable damage to the SiO2 substrate at the gap region, bespeaks the intrinsic switching from post-breakdown SiO2. It calls for caution when studying resistive switching in nanosystems on oxide substrates, since oxide breakdown extrinsic to the nanosystem can mimic resistive switching. Meanwhile, the devices show promising memory properties. The observed intermediate states reveal the filamentary nature of the switching. The switching is further explored in a vertical representation as potential candidate for high-density memory applications.en_US
dc.format.mimetypeapplication/pdfen_US
dc.identifier.callnoTHESIS PHYS. 2010 YAOen_US
dc.identifier.citationYao, Jun. "Resistive switching in silicon oxide-based systems." (2010) Master’s Thesis, Rice University. <a href="https://hdl.handle.net/1911/62109">https://hdl.handle.net/1911/62109</a>.en_US
dc.identifier.urihttps://hdl.handle.net/1911/62109en_US
dc.language.isoengen_US
dc.rightsCopyright is held by the author, unless otherwise indicated. Permission to reuse, publish, or reproduce the work beyond the bounds of fair use or other exemptions to copyright law must be obtained from the copyright holder.en_US
dc.subjectElectronicsen_US
dc.subjectElectrical engineeringen_US
dc.subjectMaterials scienceen_US
dc.titleResistive switching in silicon oxide-based systemsen_US
dc.typeThesisen_US
dc.type.materialTexten_US
thesis.degree.departmentPhysicsen_US
thesis.degree.disciplineNatural Sciencesen_US
thesis.degree.grantorRice Universityen_US
thesis.degree.levelMastersen_US
thesis.degree.nameMaster of Scienceen_US
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