Resistive Switching and Memory effects in Silicon Oxide Based Nanostructures

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dc.contributor.advisorTour, James M.en_US
dc.creatorYao, Junen_US
dc.date.accessioned2013-03-08T00:40:13Zen_US
dc.date.available2013-03-08T00:40:13Zen_US
dc.date.issued2012en_US
dc.description.abstractSilicon oxide (SiO x 1 ∠ x [∠, double =]2) has long been used and considered as a passive and insulating component in the construction of electronic devices. In contrast, here the active role of SiO x in constructing a type of resistive switching memory is studied. From electrode-independent electrical behaviors to the visualization of the conducting filament inside the SiO x matrix, the intrinsic switching picture in SiO x is gradually revealed. The thesis starts with the introduction of some similar phenomenological switching behaviors in different electronic structures (Chapter 1), and then generalizes the electrode-material-independent electrical behaviors on SiO x substrates, providing indirect evidence to the intrinsic SiO x switching (Chapter 2). From planar nanogap systems to vertical sandwiched structures, Chapter 3 further discusses the switching behaviors and properties in SiO x . By localization of the switching site, the conducting filament in SiO x is visualized under transmission electron microscope using both static and in situ imaging methods (Chapter 4). With the intrinsic conduction and switching in SiO x largely revealed, Chapter 5 discusses its impact and implications to the molecular electronics and nanoelectronics where SiO x is constantly used. As comparison, another type of memory effect in semiconductors (carbon nanotubes) based on charge trapping at the semiconductor/SiO x interface is discussed (Chapter 6).en_US
dc.format.extent208 p.en_US
dc.format.mimetypeapplication/pdfen_US
dc.identifier.callnoTHESIS PHYS. 2012 YAOen_US
dc.identifier.citationYao, Jun. "Resistive Switching and Memory effects in Silicon Oxide Based Nanostructures." (2012) Diss., Rice University. <a href="https://hdl.handle.net/1911/70503">https://hdl.handle.net/1911/70503</a>.en_US
dc.identifier.digitalYaoJen_US
dc.identifier.urihttps://hdl.handle.net/1911/70503en_US
dc.language.isoengen_US
dc.rightsCopyright is held by the author, unless otherwise indicated. Permission to reuse, publish, or reproduce the work beyond the bounds of fair use or other exemptions to copyright law must be obtained from the copyright holder.en_US
dc.subjectApplied sciencesen_US
dc.subjectPure sciencesen_US
dc.subjectResistive switchingen_US
dc.subjectSilicon oxideen_US
dc.subjectCondensed matter physicsen_US
dc.subjectMaterials scienceen_US
dc.titleResistive Switching and Memory effects in Silicon Oxide Based Nanostructuresen_US
dc.typeThesisen_US
dc.type.materialTexten_US
thesis.degree.departmentPhysicsen_US
thesis.degree.disciplineNatural Sciencesen_US
thesis.degree.grantorRice Universityen_US
thesis.degree.levelDoctoralen_US
thesis.degree.nameDoctor of Philosophyen_US
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