Resistive Switching and Memory effects in Silicon Oxide Based Nanostructures

Simple item page
dc.contributor.advisorTour, James M.
dc.creatorYao, Jun
dc.date.accessioned2013-03-08T00:40:13Z
dc.date.available2013-03-08T00:40:13Z
dc.date.issued2012
dc.description.abstractSilicon oxide (SiO x 1 ∠ x [∠, double =]2) has long been used and considered as a passive and insulating component in the construction of electronic devices. In contrast, here the active role of SiO x in constructing a type of resistive switching memory is studied. From electrode-independent electrical behaviors to the visualization of the conducting filament inside the SiO x matrix, the intrinsic switching picture in SiO x is gradually revealed. The thesis starts with the introduction of some similar phenomenological switching behaviors in different electronic structures (Chapter 1), and then generalizes the electrode-material-independent electrical behaviors on SiO x substrates, providing indirect evidence to the intrinsic SiO x switching (Chapter 2). From planar nanogap systems to vertical sandwiched structures, Chapter 3 further discusses the switching behaviors and properties in SiO x . By localization of the switching site, the conducting filament in SiO x is visualized under transmission electron microscope using both static and in situ imaging methods (Chapter 4). With the intrinsic conduction and switching in SiO x largely revealed, Chapter 5 discusses its impact and implications to the molecular electronics and nanoelectronics where SiO x is constantly used. As comparison, another type of memory effect in semiconductors (carbon nanotubes) based on charge trapping at the semiconductor/SiO x interface is discussed (Chapter 6).
dc.format.extent208 p.en_US
dc.format.mimetypeapplication/pdf
dc.identifier.callnoTHESIS PHYS. 2012 YAO
dc.identifier.citationYao, Jun. "Resistive Switching and Memory effects in Silicon Oxide Based Nanostructures." (2012) Diss., Rice University. <a href="https://hdl.handle.net/1911/70503">https://hdl.handle.net/1911/70503</a>.
dc.identifier.digitalYaoJen_US
dc.identifier.urihttps://hdl.handle.net/1911/70503
dc.language.isoeng
dc.rightsCopyright is held by the author, unless otherwise indicated. Permission to reuse, publish, or reproduce the work beyond the bounds of fair use or other exemptions to copyright law must be obtained from the copyright holder.
dc.subjectApplied sciences
dc.subjectPure sciences
dc.subjectResistive switching
dc.subjectSilicon oxide
dc.subjectCondensed matter physics
dc.subjectMaterials science
dc.titleResistive Switching and Memory effects in Silicon Oxide Based Nanostructures
dc.typeThesis
dc.type.materialText
thesis.degree.departmentPhysics
thesis.degree.disciplineNatural Sciences
thesis.degree.grantorRice University
thesis.degree.levelDoctoral
thesis.degree.nameDoctor of Philosophy
Files
Original bundle
Now showing 1 - 1 of 1
Thumbnail Image
Name:
YaoJ.pdf
Size:
19.95 MB
Format:
Adobe Portable Document Format
Download
Collections
Rice University Electronic Theses and Dissertations