Mixed P and N type conduction in RF sputtered Hg1-xCdXTe thin films

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dc.contributor.advisorWilson, William L.en_US
dc.contributor.committeeMemberEstle, Thomas L.en_US
dc.contributor.committeeMemberBrotzen, Franz R.en_US
dc.creatorLiou, Tain-Ien_US
dc.date.accessioned2018-12-18T21:25:13Zen_US
dc.date.available2018-12-18T21:25:13Zen_US
dc.date.issued1983en_US
dc.description.abstractRF sputtered HgjCdTe thin films were deposited on <111> silicon substrates. Different values of negative bias were applied to the film during growth. X-ray diffraction was used to investigate the crystal structure of the films. Van Der Pauw and Hall measurements were used respectively to obtain resistivities and carrier concentrations of films at room temperature (3°K). Carrier concentration variation with temperature was also measured. A series of films were deposited with different substrate temperatures in order to investigate the effect on crystal structure and electrical properties. When substrate bias was increased, it was found that the film thickness decreased» the crystallographic order of the films became worse, and the room temperature resistivity increased. Measurement of carrier concentration versus temperature between 77°K and 3°K showed the films to be p type when the temperature was around 77°E and n type at high temperatures. It was also found that when the substrate temperature was increased during deposition, the crystal structure improved somewhat. Room temperature resistivity decreased, and the carrier type gradually changed from n type to p type as the deposition temperature was increased. A theoretical model using both a non-degenerate approximation as well as taking into account degenerate considerations was developed to compare with the experimental data.en_US
dc.format.digitalOriginreformatted digitalen_US
dc.format.extent87 ppen_US
dc.identifier.callnoTHESIS E.E. 1983 LIOUen_US
dc.identifier.citationLiou, Tain-I. "Mixed P and N type conduction in RF sputtered Hg1-xCdXTe thin films." (1983) Master’s Thesis, Rice University. <a href="https://hdl.handle.net/1911/104545">https://hdl.handle.net/1911/104545</a>.en_US
dc.identifier.digitalRICE2180en_US
dc.identifier.urihttps://hdl.handle.net/1911/104545en_US
dc.language.isoengen_US
dc.rightsCopyright is held by the author, unless otherwise indicated. Permission to reuse, publish, or reproduce the work beyond the bounds of fair use or other exemptions to copyright law must be obtained from the copyright holder.en_US
dc.titleMixed P and N type conduction in RF sputtered Hg1-xCdXTe thin filmsen_US
dc.typeThesisen_US
dc.type.materialTexten_US
thesis.degree.departmentElectrical Engineeringen_US
thesis.degree.disciplineEngineeringen_US
thesis.degree.grantorRice Universityen_US
thesis.degree.levelMastersen_US
thesis.degree.nameMaster of Scienceen_US
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