Input vector control for post-silicon leakage current minimization under manufacturing variations

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dc.contributor.authorAlkabani, Yousraen_US
dc.contributor.authorKoushanfar, Farinazen_US
dc.contributor.authorMassey, Tammaraen_US
dc.contributor.authorPotkonjak, Miodragen_US
dc.date.accessioned2017-08-02T22:03:05Zen_US
dc.date.available2017-08-02T22:03:05Zen_US
dc.date.issued2008-02-04en_US
dc.date.noteFebruary 4, 2008en_US
dc.description.abstractWe present the first approach for post-silicon leakage power reduction through input vector control (IVC) that takes into account the impact of the manufacturing variability (MV). Because of the MV, the integrated circuits (ICs) implementing one design require different input vectors to achieve their lowest leakage states. There are two major challenges that have to be addressed. The first is the extraction of the gate-level characteristics of an IC by measuring only the overall leakage power for different inputs. The second problem is the rapid generation of input vectors that result in a low leakage for a large number of unique ICs that implement a given design, but are different in the post-manufacturing phase. We solve the first problem using a linear programming formulation that in a polynomial time, finds the most likely gate-level characterization of a pertinent IC. The approach is provably optimal, if there are no measurement errors; we also examine the erroneous cases. We address the second problem using the coordinated application of statistical clustering and the very large neighborhood iterative improvement algorithm. Experimental results on a large set of benchmark instances demonstrate the efficiency of the proposed methods. For example, the leakage power consumption could be reduced in average by more than 10.4%, when compared to the previously published IVC techniques that did not consider MV.en_US
dc.format.extent6 ppen_US
dc.identifier.citationAlkabani, Yousra, Koushanfar, Farinaz, Massey, Tammara, et al.. "Input vector control for post-silicon leakage current minimization under manufacturing variations." (2008) https://hdl.handle.net/1911/96367.en_US
dc.identifier.digitalTR08-04en_US
dc.identifier.urihttps://hdl.handle.net/1911/96367en_US
dc.language.isoengen_US
dc.rightsYou are granted permission for the noncommercial reproduction, distribution, display, and performance of this technical report in any format, but this permission is only for a period of forty-five (45) days from the most recent time that you verified that this technical report is still available from the Computer Science Department of Rice University under terms that include this permission. All other rights are reserved by the author(s).en_US
dc.titleInput vector control for post-silicon leakage current minimization under manufacturing variationsen_US
dc.typeTechnical reporten_US
dc.type.dcmiTexten_US
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