Interferometric Phase Shift Technique for High Resolution Deep UV Microlithography

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dc.citation.conferenceDate1994en_US
dc.citation.conferenceNameTenth International Symposium on Gas Flow and Chemical Lasersen_US
dc.citation.firstpage617
dc.citation.lastpage624
dc.citation.locationFriedrichshafen, Germanyen_US
dc.contributor.authorTittel, Frank K.
dc.contributor.authorCavallaro, Joseph R.
dc.contributor.authorKido, Motoi
dc.contributor.authorSmayling, Michael C.
dc.contributor.authorSzabo, Gabor
dc.contributor.authorWilson, William L.
dc.contributor.orgCenter for Multimedia Communicationen_US
dc.date.accessioned2012-06-21T20:41:39Z
dc.date.available2012-06-21T20:41:39Z
dc.date.issued1994-09-01eng
dc.description.abstractA new phase shifting technique based on interferometry has been developed which is especially suited for deep-UV microlithography. Using only a single layer chromium mask, with no additional phase shift elements, significant resolution and contrast enhancement over conventional transmission lithography can be achieved. Both computer simulations, as well as experiments using a CCD camera and UV photoresist confirm the capabilities of this new approach. Using a relatively simple experimental setup and an illumination wavelength of 355 nm, lines with feature sizes as find as 0.3 um were achieved.en_US
dc.identifier.citationF. K. Tittel, J. R. Cavallaro, M. Kido, M. C. Smayling, G. Szabo and W. L. Wilson, "Interferometric Phase Shift Technique for High Resolution Deep UV Microlithography," 1994.*
dc.identifier.doihttp://dx.doi.org/10.1117/12.204981en_US
dc.identifier.urihttps://hdl.handle.net/1911/64287
dc.language.isoengen
dc.publisherSPIEen_US
dc.subjectPhase shiften_US
dc.subjectMicrolithographyen_US
dc.subjectExcimer laseren_US
dc.titleInterferometric Phase Shift Technique for High Resolution Deep UV Microlithographyen_US
dc.typeConference paperen_US
dc.type.dcmiTexten
dc.type.dcmiTexten_US
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