Power Electronics Based on Ultrawide Bandgap Semiconductors: from Material Engineering to Device Applications

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dc.contributor.advisorZhao, Yujien_US
dc.creatorXu, Mingfeien_US
dc.date.accessioned2024-01-24T22:47:11Zen_US
dc.date.available2024-01-24T22:47:11Zen_US
dc.date.created2023-12en_US
dc.date.issued2023-11-16en_US
dc.date.submittedDecember 2023en_US
dc.date.updated2024-01-24T22:47:11Zen_US
dc.description.abstractThis work demonstrates high-performance BN/β-Ga2O3 metal-insulator-semiconductor Schottky barrier diodes (MIS SBDs). The BN layer is directly grown on the β-Ga2O3 by pulsed laser deposition (PLD). The presence of a ~2.8 nm BN layer is confirmed by a series of techniques, including X-ray photoelectron spectroscopy (XPS), Raman spectroscopy, and high-resolution transmission electron microscopy (HRTEM). The MIS SBDs show an on/off ratio of ~ 107 and an increased on-resistance due to the insertion of the BN layer. An increased Schottky barrier height is observed from capacitance-voltage (C-V) measurements. Temperature-dependent measurements suggest the existence of an inhomogeneous Schottky barrier. The breakdown voltage is enhanced from 732 V for a regular SBD to 1045 V for a MIS SBD with the ultrathin BN layer, which can be ascribed to the increased Schottky barrier height and reduced leakage currents. This work provides a promising way to optimize the performance of β-Ga2O3-based devices for power electronics.en_US
dc.format.mimetypeapplication/pdfen_US
dc.identifier.citationXu, Mingfei. "Power Electronics Based on Ultrawide Bandgap Semiconductors: from Material Engineering to Device Applications." (2023). Master's thesis, Rice University. https://hdl.handle.net/1911/115415en_US
dc.identifier.urihttps://hdl.handle.net/1911/115415en_US
dc.language.isoengen_US
dc.rightsCopyright is held by the author, unless otherwise indicated. Permission to reuse, publish, or reproduce the work beyond the bounds of fair use or other exemptions to copyright law must be obtained from the copyright holder.en_US
dc.subjectGa2O3en_US
dc.subjectBoron Nitrideen_US
dc.subjectUltrawide Bandgap Semiconductoren_US
dc.subjectSchottky Barrier Diodeen_US
dc.subjectPulsed Laser Depositionen_US
dc.titlePower Electronics Based on Ultrawide Bandgap Semiconductors: from Material Engineering to Device Applicationsen_US
dc.typeThesisen_US
dc.type.materialTexten_US
thesis.degree.departmentElectrical and Computer Engineeringen_US
thesis.degree.disciplineEngineeringen_US
thesis.degree.grantorRice Universityen_US
thesis.degree.levelMastersen_US
thesis.degree.nameMaster of Scienceen_US
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