Power Electronics Based on Ultrawide Bandgap Semiconductors: from Material Engineering to Device Applications

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dc.contributor.advisorZhao, Yuji
dc.creatorXu, Mingfei
dc.date.accessioned2024-01-24T22:47:11Z
dc.date.available2024-01-24T22:47:11Z
dc.date.created2023-12
dc.date.issued2023-11-16
dc.date.submittedDecember 2023
dc.date.updated2024-01-24T22:47:11Z
dc.description.abstractThis work demonstrates high-performance BN/β-Ga2O3 metal-insulator-semiconductor Schottky barrier diodes (MIS SBDs). The BN layer is directly grown on the β-Ga2O3 by pulsed laser deposition (PLD). The presence of a ~2.8 nm BN layer is confirmed by a series of techniques, including X-ray photoelectron spectroscopy (XPS), Raman spectroscopy, and high-resolution transmission electron microscopy (HRTEM). The MIS SBDs show an on/off ratio of ~ 107 and an increased on-resistance due to the insertion of the BN layer. An increased Schottky barrier height is observed from capacitance-voltage (C-V) measurements. Temperature-dependent measurements suggest the existence of an inhomogeneous Schottky barrier. The breakdown voltage is enhanced from 732 V for a regular SBD to 1045 V for a MIS SBD with the ultrathin BN layer, which can be ascribed to the increased Schottky barrier height and reduced leakage currents. This work provides a promising way to optimize the performance of β-Ga2O3-based devices for power electronics.
dc.format.mimetypeapplication/pdf
dc.identifier.citationXu, Mingfei. "Power Electronics Based on Ultrawide Bandgap Semiconductors: from Material Engineering to Device Applications." (2023). Master's thesis, Rice University. https://hdl.handle.net/1911/115415
dc.identifier.urihttps://hdl.handle.net/1911/115415
dc.language.isoeng
dc.rightsCopyright is held by the author, unless otherwise indicated. Permission to reuse, publish, or reproduce the work beyond the bounds of fair use or other exemptions to copyright law must be obtained from the copyright holder.
dc.subjectGa2O3
dc.subjectBoron Nitride
dc.subjectUltrawide Bandgap Semiconductor
dc.subjectSchottky Barrier Diode
dc.subjectPulsed Laser Deposition
dc.titlePower Electronics Based on Ultrawide Bandgap Semiconductors: from Material Engineering to Device Applications
dc.typeThesis
dc.type.materialText
thesis.degree.departmentElectrical and Computer Engineering
thesis.degree.disciplineEngineering
thesis.degree.grantorRice University
thesis.degree.levelMasters
thesis.degree.nameMaster of Science
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