A small forbidden gap matched to low-energy photons (meV) and a quasi-Dirac electron system are both definitive
characteristics of bilayer graphene (GR) that has gained it considerable interest in realizing a broadly tunable sensor
for application in the microwave region around gigahertz (GHz) and terahertz (THz) regimes. In this work, a
systematic study is presented which explores the GHz/THz detection limit of both bilayer and single-layer graphene
field-effect transistor (GR-FET) devices. Several major improvements to the wiring setup, insulation architecture,
graphite source, and bolometric heating of the GR-FET sensor were made in order to extend microwave
photoresponse past previous reports of 40 GHz and to further improve THz detection.