Browsing by Author "Pan, Hao"

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    Effect of fabrication processes on BaTiO3 capacitor properties
    (AIP Publishing, 2024) Jiang, Yizhe; Tian, Zishen; Kavle, Pravin; Pan, Hao; Martin, Lane W.; Rice Advanced Materials Institute
    There is an increasing desire to utilize complex functional electronic materials such as ferroelectrics in next-generation microelectronics. As new materials are considered or introduced in this capacity, an understanding of how we can process these materials into those devices must be developed. Here, the effect of different fabrication processes on the ferroelectric and related properties of prototypical metal oxide (SrRuO3)/ferroelectric (BaTiO3)/metal oxide (SrRuO3) heterostructures is explored. Two different types of etching processes are studied, namely, wet etching of the top SrRuO3 using a NaIO4 solution and dry etching using an Ar+-ion beam (i.e., ion milling). Polarization-electric-field hysteresis loops for capacitors produced using both methods are compared. For the ion-milling process, it is found that the Ar+ beam can introduce defects into the SrRuO3/BaTiO3/SrRuO3 devices and that the milling depth strongly influences the defect level and can induce a voltage imprint on the function. Realizing that such processing approaches may be necessary, work is performed to ameliorate the imprint of the hysteresis loops via ex situ “healing” of the process-induced defects by annealing the ferroelectric material in a barium-and-oxygen-rich environment via a chemical-vapor-deposition-style process. This work provides a pathway for the nanoscale fabrication of these candidate materials for next-generation memory and logic applications.
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    Spin disorder control of topological spin texture
    (Springer Nature, 2024) Zhang, Hongrui; Shao, Yu-Tsun; Chen, Xiang; Zhang, Binhua; Wang, Tianye; Meng, Fanhao; Xu, Kun; Meisenheimer, Peter; Chen, Xianzhe; Huang, Xiaoxi; Behera, Piush; Husain, Sajid; Zhu, Tiancong; Pan, Hao; Jia, Yanli; Settineri, Nick; Giles-Donovan, Nathan; He, Zehao; Scholl, Andreas; N’Diaye, Alpha; Shafer, Padraic; Raja, Archana; Xu, Changsong; Martin, Lane W.; Crommie, Michael F.; Yao, Jie; Qiu, Ziqiang; Majumdar, Arun; Bellaiche, Laurent; Muller, David A.; Birgeneau, Robert J.; Ramesh, Ramamoorthy; Rice Advanced Materials Institute
    Stabilization of topological spin textures in layered magnets has the potential to drive the development of advanced low-dimensional spintronics devices. However, achieving reliable and flexible manipulation of the topological spin textures beyond skyrmion in a two-dimensional magnet system remains challenging. Here, we demonstrate the introduction of magnetic iron atoms between the van der Waals gap of a layered magnet, Fe3GaTe2, to modify local anisotropic magnetic interactions. Consequently, we present direct observations of the order-disorder skyrmion lattices transition. In addition, non-trivial topological solitons, such as skyrmioniums and skyrmion bags, are realized at room temperature. Our work highlights the influence of random spin control of non-trivial topological spin textures.