Browsing by Author "Mu, Xiaoyang"

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    Effectiveﾠg-factors of carriers in inverted InAs/GaSb bilayers
    (AIP Publishing, 2016) Mu, Xiaoyang; Sullivan, Gerard; Du, Rui-Rui
    We perform tilt-fieldﾠtransportﾠexperiment on inverted InAs/GaSb, which hosts quantum spin Hallﾠinsulator.ﾠBy means of coincidence method,ﾠLandau levelﾠ(LL) spectra of electron and hole carriers are systematically studied at different carrier densities tuned by gate voltages. When Fermi level stays in theﾠconduction band,ﾠwe observe LL crossing and anti-crossing behaviors at odd and even filling factors, respectively, with a correspondingﾠg-factor of 11.5. It remains nearly constant for varying filling factors and electron densities. On the contrary, forﾠGaSbﾠholes, only a smallﾠZeeman splittingﾠis observed even at large tilt angles, indicating aﾠg-factor of less than 3.
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    Observation of a Helical Luttinger Liquid in InAs/GaSb Quantum Spin Hall Edges
    (American Physical Society, 2015) Li, Tingxin; Wang, Pengjie; Fu, Hailong; Du, Lingjie; Schreiber, Kate A.; Mu, Xiaoyang; Liu, Xiaoxue; Sullivan, Gerard; Csáthy, Gábor A.; Lin, Xi; Du, Rui-Rui
    We report on the observation of a helical Luttinger liquid in the edge of an InAs/GaSb quantum spin Hall insulator, which shows characteristic suppression of conductance at low temperature and low bias voltage. Moreover, the conductance shows power-law behavior as a function of temperature and bias voltage. The results underscore the strong electron-electron interaction effect in transport of InAs/GaSb edge states. Because of the fact that the Fermi velocity of the edge modes is controlled by gates, the Luttinger parameter can be fine tuned. Realization of a tunable Luttinger liquid offers a one-dimensional model system for future studies of predicted correlation effects.