Browsing by Author "Kavle, Pravin"

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    Effect of fabrication processes on BaTiO3 capacitor properties
    (AIP Publishing, 2024) Jiang, Yizhe; Tian, Zishen; Kavle, Pravin; Pan, Hao; Martin, Lane W.; Rice Advanced Materials Institute
    There is an increasing desire to utilize complex functional electronic materials such as ferroelectrics in next-generation microelectronics. As new materials are considered or introduced in this capacity, an understanding of how we can process these materials into those devices must be developed. Here, the effect of different fabrication processes on the ferroelectric and related properties of prototypical metal oxide (SrRuO3)/ferroelectric (BaTiO3)/metal oxide (SrRuO3) heterostructures is explored. Two different types of etching processes are studied, namely, wet etching of the top SrRuO3 using a NaIO4 solution and dry etching using an Ar+-ion beam (i.e., ion milling). Polarization-electric-field hysteresis loops for capacitors produced using both methods are compared. For the ion-milling process, it is found that the Ar+ beam can introduce defects into the SrRuO3/BaTiO3/SrRuO3 devices and that the milling depth strongly influences the defect level and can induce a voltage imprint on the function. Realizing that such processing approaches may be necessary, work is performed to ameliorate the imprint of the hysteresis loops via ex situ “healing” of the process-induced defects by annealing the ferroelectric material in a barium-and-oxygen-rich environment via a chemical-vapor-deposition-style process. This work provides a pathway for the nanoscale fabrication of these candidate materials for next-generation memory and logic applications.
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    Non-volatile magnon transport in a single domain multiferroic
    (Springer Nature, 2024) Husain, Sajid; Harris, Isaac; Meisenheimer, Peter; Mantri, Sukriti; Li, Xinyan; Ramesh, Maya; Behera, Piush; Taghinejad, Hossein; Kim, Jaegyu; Kavle, Pravin; Zhou, Shiyu; Kim, Tae Yeon; Zhang, Hongrui; Stevenson, Paul; Analytis, James G.; Schlom, Darrell; Salahuddin, Sayeef; Íñiguez-González, Jorge; Xu, Bin; Martin, Lane W.; Caretta, Lucas; Han, Yimo; Bellaiche, Laurent; Yao, Zhi; Ramesh, Ramamoorthy; Rice Advanced Materials Institute
    Antiferromagnets have attracted significant attention in the field of magnonics, as promising candidates for ultralow-energy carriers for information transfer for future computing. The role of crystalline orientation distribution on magnon transport has received very little attention. In multiferroics such as BiFeO3 the coupling between antiferromagnetic and polar order imposes yet another boundary condition on spin transport. Thus, understanding the fundamentals of spin transport in such systems requires a single domain, a single crystal. We show that through Lanthanum (La) substitution, a single ferroelectric domain can be engineered with a stable, single-variant spin cycloid, controllable by an electric field. The spin transport in such a single domain displays a strong anisotropy, arising from the underlying spin cycloid lattice. Our work shows a pathway to understanding the fundamental origins of magnon transport in such a single domain multiferroic.