Browsing by Author "Ikhlassi, Amal"

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    Tuning Edge States in Strained-Layer InAs/GaInSb Quantum Spin Hall Insulators
    (American Physical Society, 2017) Du, Lingjie; Li, Tingxin; Lou, Wenkai; Wu, Xingjun; Liu, Xiaoxue; Han, Zhongdong; Zhang, Chi; Sullivan, Gerard; Ikhlassi, Amal; Chang, Kai; Du, Rui-Rui
    We report on a class of quantum spin Hall insulators (QSHIs) in strained-layer InAs / GaInSb quantum wells, in which the bulk gaps are enhanced up to fivefold as compared to the binary InAs / GaSb QSHI. Remarkably, with consequently increasing edge velocity, the edge conductance at zero and applied magnetic fields manifests time reversal symmetry-protected properties consistent with the Z 2 topological insulator. The InAs / GaInSb bilayers offer a much sought-after platform for future studies and applications of the QSHI.