Browsing by Author "He, Tao"

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    Electronic devices containing switchably conductive silicon oxides as a switching element and methods for production and use thereof
    (2013-11-26) Tour, James M.; Yao, Jun; Natelson, Douglas; Zhong, Lin; He, Tao; Rice University; United States Patent and Trademark Office
    In various embodiments, electronic devices containing switchably conductive silicon oxide as a switching element are described herein. The electronic devices are two-terminal devices containing a first electrical contact and a second electrical contact in which at least one of the first electrical contact or the second electrical contact is deposed on a substrate to define a gap region therebetween. A switching layer containing a switchably conductive silicon oxide resides in the gap region between the first electrical contact and the second electrical contact. The electronic devices exhibit hysteretic current versus voltage properties, enabling their use in switching and memory applications. Methods for configuring, operating and constructing the electronic devices are also presented herein.
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    Electronic devices containing switchably conductive silicon oxides as a switching element and methods for production and use thereof
    (2015-09-08) Tour, James M.; Yao, Jun; Natelson, Douglas; Zhong, Lin; He, Tao; Rice University; United States Patent and Trademark Office
    In various embodiments, electronic devices containing switchably conductive silicon oxide as a switching element are described herein. The electronic devices are two-terminal devices containing a first electrical contact and a second electrical contact in which at least one of the first electrical contact or the second electrical contact is deposed on a substrate to define a gap region therebetween. A switching layer containing a switchably conductive silicon oxide resides in the gap region between the first electrical contact and the second electrical contact. The electronic devices exhibit hysteretic current versus voltage properties, enabling their use in switching and memory applications. Methods for configuring, operating and constructing the electronic devices are also presented herein.
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    The role of phonological short-term retention in new vocabulary acquisition
    (2001) He, Tao; Martin, Randi C.
    This study explored the hypothesis that short-term phonological storage may play an important role in new vocabulary acquisition and that complex working memory capacity (as measured by operation span) contributes nothing beyond phonological retention to predicting vocabulary acquisition. Three experiments were carried out to investigate the relations between short-term phonological span, working memory span, and new vocabulary acquisition. The findings indicated that phonological retention is more important for learning low association value nonwords and for initial learning (i.e., the first session), and that operation span contributes beyond phonological STM for higher association value nonwords and for later sessions. Operation span may reflect subjects' ability to quickly develop strategies to access and use semantic associations in learning the paired associates.