Browsing by Author "He, Jianli"
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Item Hybrid molecular electronic devices containing molecule-functionalized surfaces for switching- memory- and sensor applications and methods for fabricating same(2013-01-29) Tour, James M.; Stewart, Michael P.; He, Jianli; Pang, Harry F.; Rice University; United States Patent and Trademark OfficeThis invention is generally related to a method of making a molecule-surface interface comprising at least one surface comprising at least one material and at least one organic group wherein the organic group is adjoined to the surface and the method comprises contacting at least one organic group precursor with at least one surface wherein the organic group precursor is capable of reacting with the surface in a manner sufficient to adjoin the organic group and the surface. The present invention is directed to hybrid molecular electronic devices having a molecule-surface interface. Such hybrid molecular electronic devices may advantageously have either a top or bottom gate electrode for modifying a conductivity of the devices.Item Metal-free silicon-molecule-nanotube testbed and memory device(2010-04-27) Tour, James M.; He, Jianli; Chen, Bo; Flatt, Austen K.; Stephenson, Jason J.; Doyle, Condell D.; Rice University; United States Patent and Trademark OfficeWork from several laboratories has shown that metal nanofilaments cause problems in some molecular electronics testbeds. A new testbed for exploring the electrical properties of single molecules has been developed to eliminate the possibility of metal nanofilament formation and to ensure that molecular effects are measured. This metal-free system uses single-crystal silicon and single-walled carbon nanotubes as electrodes for the molecular monolayer. A direct Si-arylcarbon grafting method is used. Use of this structure with π-conjugated organic molecules results in a hysteresis loop with current-voltage measurements that are useful for an electronic memory device. The memory is non-volatile for more than 3 days, non-destructive for more than 1,000 reading operations and capable of more than 1,000 write-erase cycles before device breakdown. Devices without π-conjugated molecules (Si—H surface only) or with long-chain alkyl-bearing molecules produced no hysteresis, indicating that the observed memory effect is molecularly relevant.