Browsing by Author "Gupta, Gautam"

Now showing 1 - 4 of 4
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    Efficient hydrogen evolution in transition metal dichalcogenides via a simple one-step hydrazine reaction
    (Springer Nature, 2016) Cummins, Dustin R.; Martinez, Ulises; Sherehiy, Andriy; Kappera, Rajesh; Martinez-Garcia, Alejandro; Schulze, Roland K.; Jasinski, Jacek; Zhang, Jing; Gupta, Ram K.; Lou, Jun; Chhowalla, Manish; Sumanasekera, Gamini; Mohite, Aditya D.; Sunkara, Mahendra K.; Gupta, Gautam
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    Metallic 1T phase source/drain electrodes for field effect transistors from chemical vapor deposited MoS2
    (AIP, 2014) Kappera, Rajesh; Voiry, Damien; Yalcin, Sibel Ebru; Jen, Wesley; Acerce, Muharrem; Torrel, Sol; Branch, Brittany; Lei, Sidong; Chen, Weibing; Najmaei, Sina; Lou, Jun; Ajayan, Pulickel M.; Gupta, Gautam; Mohite, Aditya D.; Chhowalla, Manish
    Two dimensional transitionmetal dichalcogenides (2D TMDs) offer promise as optoelectronic materials due to their direct band gap and reasonably good mobility values. However, most metals form high resistance contacts on semiconducting TMDs such as MoS2. The large contact resistance limits the performance of devices. Unlike bulk materials, low contact resistance cannot be stably achieved in 2D materials by doping. Here we build on our previous work in which we demonstrated that it is possible to achieve low contact resistance electrodes by phase transformation. We show that similar to the previously demonstrated mechanically exfoliated samples, it is possible to decrease the contact resistance and enhance the FET performance by locally inducing and patterning the metallic 1T phase of MoS2 on chemically vapor deposited material. The device properties are substantially improved with 1T phase source/drain electrodes.
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    Supramolecular block copolymer photovoltaics through ureido-pyrimidinone hydrogen bonding interactions
    (Royal Society of Chemistry, 2016) Lin, Yen-Hao; Nie, Wanyi; Tsai, Hsinhan; Li, Xiaoyi; Gupta, Gautam; Mohite, Aditya D.; Verduzco, Rafael
    A challenge in the development of bulk heterojunction organic photovoltaics (BHJ OPVs) is achieving a desirable nanoscale morphology. This is particularly true for polymer blend OPVs in which large-scale phase separation occurs during processing. Here, we present a versatile approach to control the morphology in polymer blend OPVs through incorporation of self-associating 4 2-ureido-4[1H]-pyrimidinone (UPy) endgroups onto donor and acceptor conjugated polymers. These UPy functionalized polymers associate to form supramolecular block copolymers during solution blending and film casting. Atomic force microscopy measurements show that supramolecular associations can improve film uniformity. We find that the performance of supramolecular block copolymer OPVs improves from 0.45% to 0.77% relative to the non-associating conjugated polymer blends at the same 155 °C annealing conditions. Impedance measurements reveal that UPy endgroups both increase the resistance for charge recombination and for bulk charge transport. This work represents a versatile approach to reducing large-scale phase separation in polymer–polymer blends and directing the morphology through supramolecular interactions.
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    Ternary CuIn7Se11: Towards Ultra-Thin Layered Photodetectors and Photovoltaic Devices
    (Wiley, 2014) Lei, Sidong; Sobhani, Ali; Wen, Fangfang; George, Antony; Wang, Qizhong; Huang, Yihan; Dong, Pei; Li, Bo; Najmaei, Sina; Bellah, James; Gupta, Gautam; Mohite, Aditya D.; Ge, Liehui; Lou, Jun; Halas, Naomi J.; Vajtai, Robert; Ajayan, Pulickel
    2D materials have been widely studied over the past decade for their potential applications in electronics and optoelectronics. In these materials, elemental composition plays a critical role in defining their physical properties. Here we report the first successful synthesis of individual high quality CuIn7Se11 (CIS) ternary 2D layers and demonstrate their potential use in photodetection applications. Photoconductivity measurements show an indirect bandgap of 1.1 eV for few-layered CIS, an external quantum efficiency of 88.0 % with 2 V bias across 2 μm channel with and a signal-to-noise ratio larger than 95 dB. By judicious choice of electrode materials, we demonstrate the possibility of layered CIS-based 2D photovoltaic devices. This study examines this ternary 2D layered system for the first time, demonstrating the clear potential for layered CIS in 2D material-based optoelectronic device applications.