Browsing by Author "Chen, Ruoyu"
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Item Enhanced noise at high bias in atomic-scale Au break junctions(Nature Publishing Group, 2014) Chen, Ruoyu; Wheeler, Patrick J.; Di Ventra, M.; Natelson,D.Heating in nanoscale systems driven out of equilibrium is of fundamental importance, has ramifications for technological applications, and is a challenge to characterize experimentally. Prior experiments using nanoscale junctions have largely focused on heating of ionic degrees of freedom, while heating of the electrons has been mostly neglected. We report measurements in atomic-scale Au break junctions, in which the bias-driven component of the current noise is used as a probe of the electronic distribution. At low biases (<150 mV) the noise is consistent with expectations of shot noise at a fixed electronic temperature. At higher biases, a nonlinear dependence of the noise power is observed. We consider candidate mechanisms for this increase, including flicker noise (due to ionic motion), heating of the bulk electrodes, nonequilibrium electron-phonon effects, and local heating of the electronic distribution impinging on the ballistic junction. We find that flicker noise and bulk heating are quantitatively unlikely to explain the observations. We discuss the implications of these observations for other nanoscale systems, and experimental tests to distinguish vibrational and electron interaction mechanisms for the enhanced noise.Item Excess noise in STM-style break junctions at room temperature(American Physical Society, 2012) Chen, Ruoyu; Wheeler, Patrick J.; Natelson, D.Current noise in nanoscale systems provides additional information beyond the electronic conductance. We report measurements at room temperature of the nonequilibrium モexcessヤ noise in ensembles of atomic-scale gold junctions repeatedly formed and broken between a tip and a film, as a function of bias conditions. We observe suppression of the noise near conductances associated with conductance quantization in such junctions, as expected from the finite temperature theory of shot noise in the limit of few quantum channels. In higher conductance junctions, the Fano factor of the noise approaches 1/3 the value seen in the low conductance tunneling limit, consistent with theoretical expectations for the approach to the diffusive regime. At conductance values where the shot noise is comparatively suppressed, there is a residual contribution to the noise that scales quadratically with the applied bias, likely due to a flicker noise/conductance fluctuation mechanism.Item Noise in electromigrated nanojunctions(American Physical Society, 2013) Wheeler, P.J.; Chen, Ruoyu; Natelson, D.Noise measurements are a probe beyond simple electronic transport that can reveal additional information about electronic correlations and inelastic processes. Here we report noise measurements in individual electromigrated nanojunctions, examining the evolution from the many-channel regime to the tunneling regime, using a radio frequency technique. While we generally observe the dependence of noise on bias expected for shot noise, in approximately 12% of junction configurations we find discrete changes in the bias dependence at threshold values of the bias, consistent with electronic excitation of local vibrational modes. Moreover, with some regularity we find significant mesoscopic variation in the magnitude of the noise in particular junctions even with small changes in the accompanying conductance. In another ∼17% of junctions we observe pronounced asymmetries in the inferred noise magnitude as a function of bias polarity, suggesting that investigators should be concerned about current-driven ionic motion in the electrodes even at biases well below those used for deliberate electromigration.Item RF Shot Noise Measurements in Au Atomic-scale Junctions(2016-01-29) Chen, Ruoyu; Natelson, Douglas; Du, Ruirui; Kelly, KevinConduction electrons are responsible for many physical or chemical phenomena in condensed matter systems, and their behavior can be directly studied by electronic transport measurements. In conventional transport measurements, conductance or resistance is usually the focus. Such a measurement can be as simple as a quick two terminal DC check by a multi-meter, or a more sophisticated lock-in measurement of multiple higher harmonic signals synchronized to different frequencies. Conductance carries direct information about the quasi-particle density of states and the local electronic distributions, which are usually Fermi-Dirac distribution. Conductance is modified or dominated by scattering from defacts or interfaces, and could also reflect the spin-spin exchange interactions or inelastic couplings with phonons and photons. Naturally one can ask the question: is there anything else we can measure electronically, which carries extra information that a conductance measurement does not provide? One answer to this question is the electronic noise. While the conductance reflects the average charge conduction ability of a system, noise describes how the physical quantities fluctuate around their average values. Some of the fluctuations carry information about their physical origins. This thesis will focus on one particular type of the electronic noise shot noise, but other types of noise will also be introduced and discussed. We choose to measure the radio frequency component of shot noise, combining with a modulated lock-in detection technique, which provides a method to largely get rid of other unwanted low-frequency noise signals. Au atomic-scale junctions are the systems we studied here. Au is relatively well understood and will not generate too many complications, so it's ideal as the first platform for us to understand both shot noise itself and our RF technique. On the other hand, the atomic scale raises fundamental questions about electronic transport and local energy exchange and dissipation, which make our measurements fundamentally interesting. We employed two different types of mechanical controlled Au break junctions: the Scanning Tunneling Microscope(STM)-style Au break junctions, and the mechanically bending Au break junctions. We studied shot noise behaviors of individual configurations or ensemble averages over all the accessible configurations. Measurements were conducted at both room temperature and liquid He temperature. High quality shot noise measurements were demonstrated. New phenomena like anomalous excess noise enhancement at high bias voltages and non-zero shot noise variance below 1G0 were seen. We also found shot noise to be surprisingly insensitive to temperatures between 4.2K and 100K, and can be well described by the non-interacting approximation.