Repository logo
English
  • English
  • Català
  • Čeština
  • Deutsch
  • Español
  • Français
  • Gàidhlig
  • Italiano
  • Latviešu
  • Magyar
  • Nederlands
  • Polski
  • Português
  • Português do Brasil
  • Suomi
  • Svenska
  • Türkçe
  • Tiếng Việt
  • Қазақ
  • বাংলা
  • हिंदी
  • Ελληνικά
  • Yкраї́нська
  • Log In
    or
    New user? Click here to register.Have you forgotten your password?
Repository logo
  • Communities & Collections
  • All of R-3
English
  • English
  • Català
  • Čeština
  • Deutsch
  • Español
  • Français
  • Gàidhlig
  • Italiano
  • Latviešu
  • Magyar
  • Nederlands
  • Polski
  • Português
  • Português do Brasil
  • Suomi
  • Svenska
  • Türkçe
  • Tiếng Việt
  • Қазақ
  • বাংলা
  • हिंदी
  • Ελληνικά
  • Yкраї́нська
  • Log In
    or
    New user? Click here to register.Have you forgotten your password?
  1. Home
  2. Browse by Author

Browsing by Author "Cao, Ye"

Now showing 1 - 2 of 2
Results Per Page
Sort Options
  • Loading...
    Thumbnail Image
    Item
    Domain-dependent strain and stacking in two-dimensional van der Waals ferroelectrics
    (Springer Nature, 2023) Shi, Chuqiao; Mao, Nannan; Zhang, Kena; Zhang, Tianyi; Chiu, Ming-Hui; Ashen, Kenna; Wang, Bo; Tang, Xiuyu; Guo, Galio; Lei, Shiming; Chen, Longqing; Cao, Ye; Qian, Xiaofeng; Kong, Jing; Han, Yimo
    Van der Waals (vdW) ferroelectrics have attracted significant attention for their potential in next-generation nano-electronics. Two-dimensional (2D) group-IV monochalcogenides have emerged as a promising candidate due to their strong room temperature in-plane polarization down to a monolayer limit. However, their polarization is strongly coupled with the lattice strain and stacking orders, which impact their electronic properties. Here, we utilize four-dimensional scanning transmission electron microscopy (4D-STEM) to simultaneously probe the in-plane strain and out-of-plane stacking in vdW SnSe. Specifically, we observe large lattice strain up to 4% with a gradient across ~50 nm to compensate lattice mismatch at domain walls, mitigating defects initiation. Additionally, we discover the unusual ferroelectric-to-antiferroelectric domain walls stabilized by vdW force and may lead to anisotropic nonlinear optical responses. Our findings provide a comprehensive understanding of in-plane and out-of-plane structures affecting domain properties in vdW SnSe, laying the foundation for domain wall engineering in vdW ferroelectrics.
  • Loading...
    Thumbnail Image
    Item
    Gapless topological Fulde-Ferrell superfluidity induced by an in-plane Zeeman field
    (American Physical Society, 2014) Hu, Hui; Dong, Lin; Cao, Ye; Pu, Han; Liu, Xia-Ji
    Topological superfluids are recently discovered quantum matter that hosts topologically protected gapless edge states known as Majorana fermions—exotic quantum particles that act as their own antiparticles and obey non-Abelian statistics. Their realizations are believed to lie at the heart of future technologies such as fault-tolerant quantum computation. To date, the most efficient scheme to create topological superfluids and Majorana fermions is based on the Sau-Lutchyn-Tewari-Das Sarma model with a Rashba-type spin-orbit coupling on the x-y plane and a large out-of-plane (perpendicular) Zeeman field along the z direction. Here we propose an alternative setup, where the topological superfluid phase is driven by applying an in-plane Zeeman field. This scheme offers a number of different features, notably Cooper pairings at finite center-of-mass momentum (i.e., Fulde-Ferrell pairing) and gapless excitations in the bulk. As a result, gapless topological quantum matter with an inhomogeneous pairing order parameter appears. It features unidirectional Majorana surface states at boundaries, which propagate in the same direction and connect two Weyl nodes in the bulk. We demonstrate the emergence of such exotic topological matter and the associated Majorana fermions in spin-orbit coupled atomic Fermi gases, and we determine its parameter space. The implementation of our scheme in semiconductor/superconductor heterostructures is briefly discussed.
  • About R-3
  • Report a Digital Accessibility Issue
  • Request Accessible Formats
  • Fondren Library
  • Contact Us
  • FAQ
  • Privacy Notice
  • R-3 Policies

Physical Address:

6100 Main Street, Houston, Texas 77005

Mailing Address:

MS-44, P.O.BOX 1892, Houston, Texas 77251-1892