Browsing by Author "Balicas, Luis"

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    Anomalous Metamagnetism in the Low Carrier Density Kondo Lattice YbRh3Si7
    (American Physical Society, 2018) Rai, Binod K.; Chikara, S.; Ding, Xiaxin; Oswald, Iain W.H.; Schönemann, R.; Loganathan, V.; Hallas, A.M.; Cao, H.B.; Stavinoha, Macy; Chen, T.; Man, Haoran; Carr, Scott; Singleton, John; Zapf, Vivien; Benavides, Katherine A.; Chan, Julia Y.; Zhang, Q.R.; Rhodes, D.; Chiu, Y.C.; Balicas, Luis; Aczel, A.A.; Huang, Q.; Lynn, Jeffrey W.; Gaudet, J.; Sokolov, D.A.; Walker, H.C.; Adroja, D.T.; Dai, Pengcheng; Nevidomskyy, Andriy H.; Huang, C.-L.; Morosan, E.
    We report complex metamagnetic transitions in single crystals of the new low carrier Kondo antiferromagnet YbRh3Si7. Electrical transport, magnetization, and specific heat measurements reveal antiferromagnetic order at TN=7.5 K. Neutron diffraction measurements show that the magnetic ground state of YbRh3Si7 is a collinear antiferromagnet, where the moments are aligned in the ab plane. With such an ordered state, no metamagnetic transitions are expected when a magnetic field is applied along the c axis. It is therefore surprising that high-field magnetization, torque, and resistivity measurements with H∥c reveal two metamagnetic transitions at μ0H1=6.7 T and μ0H2=21 T. When the field is tilted away from the c axis, towards the ab plane, both metamagnetic transitions are shifted to higher fields. The first metamagnetic transition leads to an abrupt increase in the electrical resistivity, while the second transition is accompanied by a dramatic reduction in the electrical resistivity. Thus, the magnetic and electronic degrees of freedom in YbRh3Si7 are strongly coupled. We discuss the origin of the anomalous metamagnetism and conclude that it is related to competition between crystal electric-field anisotropy and anisotropic exchange interactions.
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    CVD-grown monolayered MoS2 as an effective photosensor operating at low-voltage
    (IOP Publishing, 2014) Perea-López, Néstor; Lin, Zhong; Pradhan, Nihar R.; Iñiguez-Rábago, Agustín; Elías, Ana Laura; McCreary, Amber; Lou, Jun; Ajayan, Pulickel M.; Terrones, Humberto; Balicas, Luis; Terrones, Mauricio
    We report the fabrication of a photosensor based on as-grown single crystal monolayers of MoS2synthesized by chemical vapor deposition (CVD). The measurements were performed using Au/Ti leads in a two terminal configuration on CVD-grown MoS2 on a SiO2/Si substrate. The device was operated in air at room temperature at low bias voltages ranging from −2 V to 2 V and its sensing capabilities were tested for two different excitation wavelengths (514.5 nm and 488 nm). The responsivity reached 1.1 mA W−1 when excited with a 514.5 nm laser at a bias of 1.5 V. This responsivity is one order of magnitude larger than that reported from photo devices fabricated using CVD-grown multilayered WS2. A rectifying-effect was observed for the optically excited current, which was four times larger in the direct polarization bias when compared to the reverse bias photocurrent. Such rectifying behavior can be attributed to the asymmetric electrode placement on the triangular MoS2 monocrystal. It is envisioned that these components could eventually be used as efficient and low cost photosensors based on CVD-grown transition metal dichalcogenide monolayers.
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    The Magnetic Genome of Two-Dimensional van der Waals Materials
    (American Chemical Society, 2022) Wang, Qing Hua; Bedoya-Pinto, Amilcar; Blei, Mark; Dismukes, Avalon H.; Hamo, Assaf; Jenkins, Sarah; Koperski, Maciej; Liu, Yu; Sun, Qi-Chao; Telford, Evan J.; Kim, Hyun Ho; Augustin, Mathias; Vool, Uri; Yin, Jia-Xin; Li, Lu Hua; Falin, Alexey; Dean, Cory R.; Casanova, Fèlix; Evans, Richard F.L.; Chshiev, Mairbek; Mishchenko, Artem; Petrovic, Cedomir; He, Rui; Zhao, Liuyan; Tsen, Adam W.; Gerardot, Brian D.; Brotons-Gisbert, Mauro; Guguchia, Zurab; Roy, Xavier; Tongay, Sefaattin; Wang, Ziwei; Hasan, M. Zahid; Wrachtrup, Joerg; Yacoby, Amir; Fert, Albert; Parkin, Stuart; Novoselov, Kostya S.; Dai, Pengcheng; Balicas, Luis; Santos, Elton J.G.
    Magnetism in two-dimensional (2D) van der Waals (vdW) materials has recently emerged as one of the most promising areas in condensed matter research, with many exciting emerging properties and significant potential for applications ranging from topological magnonics to low-power spintronics, quantum computing, and optical communications. In the brief time after their discovery, 2D magnets have blossomed into a rich area for investigation, where fundamental concepts in magnetism are challenged by the behavior of spins that can develop at the single layer limit. However, much effort is still needed in multiple fronts before 2D magnets can be routinely used for practical implementations. In this comprehensive review, prominent authors with expertise in complementary fields of 2D magnetism (i.e., synthesis, device engineering, magneto-optics, imaging, transport, mechanics, spin excitations, and theory and simulations) have joined together to provide a genome of current knowledge and a guideline for future developments in 2D magnetic materials research.
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    Weyl nodal ring states and Landau quantization with very large magnetoresistance in square-net magnet EuGa4
    (Springer Nature, 2023) Lei, Shiming; Allen, Kevin; Huang, Jianwei; Moya, Jaime M.; Wu, Tsz Chun; Casas, Brian; Zhang, Yichen; Oh, Ji Seop; Hashimoto, Makoto; Lu, Donghui; Denlinger, Jonathan; Jozwiak, Chris; Bostwick, Aaron; Rotenberg, Eli; Balicas, Luis; Birgeneau, Robert; Foster, Matthew S.; Yi, Ming; Sun, Yan; Morosan, Emilia; Rice Center for Quantum Materials
    Magnetic topological semimetals allow for an effective control of the topological electronic states by tuning the spin configuration. Among them, Weyl nodal line semimetals are thought to have the greatest tunability, yet they are the least studied experimentally due to the scarcity of material candidates. Here, using a combination of angle-resolved photoemission spectroscopy and quantum oscillation measurements, together with density functional theory calculations, we identify the square-net compound EuGa4 as a magnetic Weyl nodal ring semimetal, in which the line nodes form closed rings near the Fermi level. The Weyl nodal ring states show distinct Landau quantization with clear spin splitting upon application of a magnetic field. At 2 K in a field of 14 T, the transverse magnetoresistance of EuGa4 exceeds 200,000%, which is more than two orders of magnitude larger than that of other known magnetic topological semimetals. Our theoretical model suggests that the non-saturating magnetoresistance up to 40 T arises as a consequence of the nodal ring state.