Zhou, JinganLi, TaoZhao, XuanZhang, XiangDoumani, JacquesXu, MingfeiHe, ZiyiLuo, ShisongMei, ZhaoboChang, ChengRobinson, Jacob T.Ajayan, Pulickel M.Kono, JunichiroZhao, Yuji2024-08-022024-08-022024Zhou, J., Li, T., Zhao, X., Zhang, X., Doumani, J., Xu, M., He, Z., Luo, S., Mei, Z., Chang, C., Robinson, J. T., Ajayan, P. M., Kono, J., & Zhao, Y. (2024). Characterizations of two-photon absorption process induced by defects in aluminum nitride using Z-scan method. Semiconductor Science and Technology, 39(7), 075011. https://doi.org/10.1088/1361-6641/ad4f09https://hdl.handle.net/1911/117566In this work, we reported two-photon absorption (TPA) measurements for aluminum vacancies in Aluminum nitride single crystals. We measured the linear transmission and identified the defect levels. Using the Z-scan method, we measured the TPA coefficients of the transitions between defect levels from 380 nm to 735 nm. The transition occurs between the aluminum vacancies defect levels. Furthermore, the power dependence shows good linear fitting, confirming the TPA mechanism. These results will be helpful for the design and fabrication of ultra-low loss waveguides and integrated photonics in the ultraviolet spectral range.engExcept where otherwise noted, this work is licensed under a Creative Commons Attribution (CC BY) license.  Permission to reuse, publish, or reproduce the work beyond the terms of the license or beyond the bounds of fair use or other exemptions to copyright law must be obtained from the copyright holder.Journal articleZhou_2024_Semicond_Sci_Technol_39_075011https://doi.org/10.1088/1361-6641/ad4f09