Mahjoub, Akram M.Nicol, AlecAbe, TakutoOuchi, TakahiroIso, YuheiKida, MichioAoki, NoboyukiMiyamoto, KatsuhikoOmatsu, TakashigeBird, Jonathan P.Ferry, David K.Ishibashi, KojiOchiai, Yuichi2014-11-112014-11-112013Mahjoub, Akram M., Nicol, Alec, Abe, Takuto, et al.. "GR-FET application for high-frequency detection device." <i>Nano Express,</i> 8, (2013) Springer: http://www.nanoscalereslett.com/content/8/1/22.https://hdl.handle.net/1911/78264A small forbidden gap matched to low-energy photons (meV) and a quasi-Dirac electron system are both definitive characteristics of bilayer graphene (GR) that has gained it considerable interest in realizing a broadly tunable sensor for application in the microwave region around gigahertz (GHz) and terahertz (THz) regimes. In this work, a systematic study is presented which explores the GHz/THz detection limit of both bilayer and single-layer graphene field-effect transistor (GR-FET) devices. Several major improvements to the wiring setup, insulation architecture, graphite source, and bolometric heating of the GR-FET sensor were made in order to extend microwave photoresponse past previous reports of 40 GHz and to further improve THz detection.engJournal articlegraphenemicrowave applicationterahertz detectionfrequency responsebolometric effectnonlinear effectambient conditionhttp://www.nanoscalereslett.com/content/8/1/22