Kim, Y.Poumirol, J.M.Lombardo, A.Kalugin, N.G.Georgiou, T.Kim, Y.J.Novoselov, K.S.Ferrari, A.C.Kono, J.Kashuba, O.Fal’ko, V.I.Smirnov, D.2013-09-182013-09-182013-05-29Y. Kim, J. Poumirol, A. Lombardo, N. Kalugin, T. Georgiou, Y. Kim, K. Novoselov, A. Ferrari, J. Kono, O. Kashuba, V. Fal’ko and D. Smirnov, "Measurement of Filling-Factor-Dependent Magnetophonon Resonances in Graphene Using Raman Spectroscopy," <i>Physical Review Letters,</i> vol. 110, 2013.https://hdl.handle.net/1911/72096We perform polarization-resolved Raman spectroscopy on graphene in magnetic fields up to 45 T. This reveals a filling-factor-dependent, multicomponent anticrossing structure of the Raman G peak, resulting from magnetophonon resonances between magnetoexcitons and E2g phonons. This is explained with a model of Raman scattering taking into account the effects of spatially inhomogeneous carrier densities and strain. Random fluctuations of strain-induced pseudomagnetic fields lead to increased scattering intensity inside the anticrossing gap, consistent with the experiments.engJournal articlehttp://dx.doi.org/10.1103/PhysRevLett.110.227402