Wilson, William L.2018-12-182018-12-181980Thielsch, Donald Kurt. "RF sputtered Hg¿-XCdXTe infrared detectors." (1980) Master’s Thesis, Rice University. <a href="https://hdl.handle.net/1911/104541">https://hdl.handle.net/1911/104541</a>.https://hdl.handle.net/1911/104541Thin films have been prepared by RF sputtering from an inhomogeneous HggCdg 2Te target onto glass substrates. Both mercury and argon were used as sputter gases. Each film consisted of a Hall bar and a 2-element detector array. Electron microprobe analysis showed the existence of a lateral composition gradient. Electrical measurements provided resistivity, mobility, and carrier concentration information. The carrier concentration was found to vary with sputter deposition rate. The detectors exhibited both photoconductive and photovoltaic response. The photovoltage was believed to have been due to a graded band gap, induced by the composition gradient. Spectral response ranged from less than 4 microns to more than 14 microns. Best photoconductive D (5, 275) was 5.5 x 17 cm Hz1/2 W-1 and best photovoltaic D (5°, 275) was 1.22 x 17 cm Hz1/2 W-1 for detectors cooled to 125° K.101 ppengCopyright is held by the author, unless otherwise indicated. Permission to reuse, publish, or reproduce the work beyond the bounds of fair use or other exemptions to copyright law must be obtained from the copyright holder.ThesisRICE2176reformatted digitalTHESIS E.E. 1980 THIELSCH