Chen, Justin S.Wang, Jiakui K.Carr, Scott V.Vogel, Sven C.Gourdon, OlivierDai, PengchengMorosan, E.2015-03-022015-03-022015Chen, Justin S., Wang, Jiakui K., Carr, Scott V., et al.. "Chemical tuning of electrical transport in Ti1−xPtxSe2−y." <i>Physical Review B,</i> 91, (2015) American Physical Society: 45125. http://dx.doi.org/10.1103/PhysRevB.91.045125.https://hdl.handle.net/1911/79052The structural and transport properties of polycrystalline Ti1−xPtxSe2−y(x≤0.13,y≤0.2) are studied, revealing highly tunable electrical properties, spanning nearly ten orders of magnitude in scaled resistivity. Using x-ray and neutron diffraction, Pt is found to dope on the Ti site. In the absence of Pt doping (for x=0), Se deficiency (y>0) increases the metallic character of TiSe2, while a large increase of the low-temperature resistivity is favored by a lack of Se deficiency (y=0) and increasing amounts of doped Pt (x>0). The chemical tuning of the resistivity in Ti1−xPtxSe2−y with Se deficiency and Pt doping results in a metal-to-insulator transition. Simultaneous Pt doping and Se deficiency (x,y>0) confirms the competition between the two opposing trends in electrical transport, with the main outcome being the suppression of the charge density wave transition below 2 K for y=2x=0.18. Band structure calculations on a subset of Ti1−xPtxSe2−y compositions are in line with the experimental observations.engArticle is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use.Journal articlehttp://dx.doi.org/10.1103/PhysRevB.91.045125