2015-05-042015-05-042010-05-18Barron, Andrew R. and Whitsitt, Elizabeth Anne, "Method for low temperature growth of inorganic materials from solution using catalyzed growth and re-growth." Patent US7718550B2. issued 2010-05-18. Retrieved from https://hdl.handle.net/1911/80021.https://hdl.handle.net/1911/80021The present invention involves a method and apparatus for depositing a silicon oxide onto a substrate from solution at low temperatures in a manner that produces homogeneous growth of the silicon oxide. The method generally comprises the following steps: (a) Chemically treating a substrate to activate it for growth of the silicon oxide. (b) Immersing the treated substrate into a bath with a reactive solution. (c) Regenerating the reactive solution to allow for continued growth of the silicon oxide. In another embodiment of the present invention, the apparatus includes a first container holding a reactive solution, a substrate on which the silicon oxide is deposited, a second container holding silica, and a means for adding silica to the reactive solution.8 ppengUtility patentUS7718550B2