Haugan, H.J.Brown, G.J.Elhamri, S.Mitchel, W.C.Mahalingam, K.Kim, M.Noe, G.T.Ogden, N.E.Kono, J.2013-09-182013-09-182012-10-23H. Haugan, G. Brown, S. Elhamri, W. Mitchel, K. Mahalingam, M. Kim, G. Noe, N. Ogden and J. Kono, "Impact of growth temperature on InAs/GaInSb strained layer superlattices for very long wavelength infrared detection," <i>Applied Physics Letters,</i> vol. 101, 2012.https://hdl.handle.net/1911/72093We explore the optimum growth space for a 47.0A ° InAs/21.5A ° Ga0.75In0.25Sb superlattices (SLs) designed for the maximum Auger suppression for a very long wavelength infrared gap. Our growth process produces a consistent gap of 5065meV. However, SL quality is sensitive to the growth temperature (Tg). For the SLs grown at 390 470 C, a photoresponse signal gradually increases as Tg increases from 400 to 440 C. Outside this temperature window, the SL quality deteriorates very rapidly. All SLs were n-type with mobility of 10 000 V/cm2 and 300K recombination lifetime of 70 ns for an optimized SLengJournal articlehttp://dx.doi.org/10.1063/1.4764015