Mu, XiaoyangSullivan, GerardDu, Rui-Rui2017-05-222017-05-222016Mu, Xiaoyang, Sullivan, Gerard and Du, Rui-Rui. "Effectiveﾠg-factors of carriers in inverted InAs/GaSb bilayers." <i>Applied Physics Letters,</i> 108, no. 1 (2016) AIP Publishing: http://dx.doi.org/10.1063/1.4939230.https://hdl.handle.net/1911/94353We perform tilt-fieldﾠtransportﾠexperiment on inverted InAs/GaSb, which hosts quantum spin Hallﾠinsulator.ﾠBy means of coincidence method,ﾠLandau levelﾠ(LL) spectra of electron and hole carriers are systematically studied at different carrier densities tuned by gate voltages. When Fermi level stays in theﾠconduction band,ﾠwe observe LL crossing and anti-crossing behaviors at odd and even filling factors, respectively, with a correspondingﾠg-factor of 11.5. It remains nearly constant for varying filling factors and electron densities. On the contrary, forﾠGaSbﾠholes, only a smallﾠZeeman splittingﾠis observed even at large tilt angles, indicating aﾠg-factor of less than 3.engArticle is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use.Journal articlehttp://dx.doi.org/10.1063/1.4939230