Tong, BingbingHan, ZhongdongLi, TingxinZhang, ChiSullivan, GerardDu, Rui-Rui2017-08-112017-08-112017Tong, Bingbing, Han, Zhongdong, Li, Tingxin, et al.. "Tuning the charge states in InAs/GaSb or InAs/GaInSb composite quantum wells by persistent photoconductivity." <i>AIP Advances,</i> 7, no. 7 (2017) AIP Publishing: http://dx.doi.org/10.1063/1.4993894.https://hdl.handle.net/1911/96648We have experimentally studied the persistent photoconductivity (PPC) in inverted InAs/GaSb and InAs/GaInSb quantum wells, which can be tuned into a bulk-insulating state by electron-hole hybridization. Specifically we tune the bulk band structure and carriers with light-emitting diode (LED) illuminations. The persistent photoconductivity could be negative or positive, depending on the specific doping structure and the illuminating photon energy. Compared to the widely-used electro-statically gating method, our findings provide a more flexible and non-invasive way to control the band structures and charge states in InAs/GaSb and InAs/GaInSb quantum wells (QWs).engAll article content, except where otherwise noted, is licensed under a Creative Commons Attribution (CC BY) license.Journal articlehttp://dx.doi.org/10.1063/1.4993894