Callahan, Daniel L.2009-06-042009-06-041993Gillespie, Paul Matthew. "Photoluminescence of nitrogen-doped zinc selenide by photo-assisted MOCVD." (1993) Diss., Rice University. <a href="https://hdl.handle.net/1911/16623">https://hdl.handle.net/1911/16623</a>.https://hdl.handle.net/1911/16623Zinc selenide is a wide band-gap (2.67 eV) II-VI compound semiconductor with potential use as a blue electro-optic device material. Problems with obtaining suitable p-type conductivity have limited device development. Zinc selenide epitaxial films, doped with nitrogen from NH$\sb3,$ have been grown on gallium arsenide substrates by laser-assisted metal organic chemical vapor deposition (MOCVD). The effect of nitrogen doping was investigated with and without direct surface irradiation incident on the surface from a broad-band light source. Low temperature (8 K) photoluminescence spectroscopy has confirmed the incorporation of nitrogen as a shallow acceptor by the presence of acceptor-bound-excitons and associated donor-acceptor-pair recombination emissions. The MOCVD growth parameters have been optimized based on the presence of characteristic features in the photoluminescence spectra. Growth rate mechanisms have been proposed for both laser-assisted MOCVD and direct-irradiation MOCVD. Simultaneous interaction of the two photo-assisted techniques show that direct irradiation of the surface does not enhance the growth rate under the laser-assisted condition. This confirms that direct surface irradiation growth mechanisms involve the interaction of photo-generated carriers with alkyl groups from the precursors.140 p.application/pdfengCopyright is held by the author, unless otherwise indicated. Permission to reuse, publish, or reproduce the work beyond the bounds of fair use or other exemptions to copyright law must be obtained from the copyright holder.ElectronicsElectrical engineeringCondensed matter physicsThesisTHESIS M.E. 1993 GILLESPIE