2018-08-232018-08-232018-06-12Tour, James M., Wang, Gunuk, Yang, Yang and Ji, Yongsung, "Porous SiOx materials for improvement in SiOx switching device performances." Patent US9997705B2. issued 2018-06-12. Retrieved from <a href="https://hdl.handle.net/1911/102490">https://hdl.handle.net/1911/102490</a>.https://hdl.handle.net/1911/102490A porous memory device, such as a memory or a switch, may provide a top and bottom electrodes with a memory material layer (e.g. SiOx) positioned between the electrodes. The memory material layer may provide a nanoporous structure. In some embodiments, the nanoporous structure may be formed electrochemically, such as from anodic etching. Electroformation of a filament through the memory material layer may occur internally through the layer rather than at an edge at extremely low electro-forming voltages. The porous memory device may also provide multi-bit storage, high on-off ratios, long high-temperature lifetime, excellent cycling endurance, fast switching, and lower power consumption.27engUtility patentUS9997705B2