Gao, FengGong, YongjiTitze, MichaelAlmeida, RaybelAjayan, Pulickel M.Li, Hebin2017-05-222017-05-222016Gao, Feng, Gong, Yongji, Titze, Michael, et al.. "Valley trion dynamics in monolayerﾠMoSe2." <i>Physical Review B,</i> 94, no. 24 (2016) American Physical Society: https://doi.org/10.1103/PhysRevB.94.245413.https://hdl.handle.net/1911/94318Charged excitons called trions play an important role in the fundamental valley dynamics in newly emerging two-dimensional semiconductor materials. We use ultrafast pump-probe spectroscopy to study the valley trion dynamics in aﾠMoSe2ﾠmonolayer grown by using chemical vapor deposition. The dynamics displays an ultrafast trion formation followed by a nonexponential decay. The measurements at different pump fluences show that the trion decay dynamics becomes slower as the excitation density increases. The observed trion dynamics and the associated density dependence are a result of the trapping by two defect states as being the dominating decay mechanism. The simulation based on a set of rate equations reproduces the experimental data for different pump fluences. Our results reveal the important trion dynamics and identify the trapping by defect states as the primary trion decay mechanism in monolayerﾠMoSe2ﾠunder the excitation densities used in our experiment.engArticle is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use.Journal articlehttps://doi.org/10.1103/PhysRevB.94.245413