2015-05-042015-05-042013-11-26Tour, James M., Yao, Jun, Natelson, Douglas, Zhong, Lin and He, Tao, "Electronic devices containing switchably conductive silicon oxides as a switching element and methods for production and use thereof." Patent US8592791B2. issued 2013-11-26. Retrieved from https://hdl.handle.net/1911/80142.https://hdl.handle.net/1911/80142In various embodiments, electronic devices containing switchably conductive silicon oxide as a switching element are described herein. The electronic devices are two-terminal devices containing a first electrical contact and a second electrical contact in which at least one of the first electrical contact or the second electrical contact is deposed on a substrate to define a gap region therebetween. A switching layer containing a switchably conductive silicon oxide resides in the gap region between the first electrical contact and the second electrical contact. The electronic devices exhibit hysteretic current versus voltage properties, enabling their use in switching and memory applications. Methods for configuring, operating and constructing the electronic devices are also presented herein.25 ppengUtility patentUS8592791B2