2017-12-142017-12-142017-10-31Zheng, Bob Yi, Wang, Yumin, Halas, Nancy J. and Nordlander, Peter, "Fully integrated CMOS-compatible photodetector with color selectivity and intrinsic gain." Patent US9806217B2. issued 2017-10-31. Retrieved from <a href="https://hdl.handle.net/1911/98879">https://hdl.handle.net/1911/98879</a>.https://hdl.handle.net/1911/98879A metal-semiconductor-metal photodetecting device and method of manufacturing a metal-semiconductor-metal photodetecting device that includes a p-type silicon substrate with an oxide layer disposed on the p-type silicon substrate. Schotty junctions are disposed adjacent to the oxide layer on the p-type silicon substrate and a plasmonic grating disposed on the oxide layer. The plasmonic grating provides wavelength range selectability for the photodetecting device.12engUtility patentUS9806217B2