2015-05-042015-05-042005-09-20Pang, Harry F. and Tour, James M., "Method of making a nanoscale electronic device." Patent US6946336B2. issued 2005-09-20. Retrieved from https://hdl.handle.net/1911/79896.https://hdl.handle.net/1911/79896The present invention relates to a method of making a nanoscale electronic device wherein said device comprises a gap between about 0.1 nm and about 100 nm between at least two conductors, semiconductors or the combination thereof. The method features complete assembly of electrical contacts before addition of a molecular component thereby preserving the integrity of the molecular electronic component and maintaining a well-formed gap. The gap produced is within the nanoscale regime, has uniform width and is further characterized by surfaces that are uniformly smooth.16 ppengUtility patentUS6946336B2