Pradhan, N.R.Rhodes, D.Memaran, S.Poumirol, J.M.Smirnov, D.Talapatra, S.Feng, S.Perea-Lopez, N.Elias, A.L.Terrones, M.Ajayan, P.M.Balicas, L.2016-03-282016-03-282015Pradhan, N.R., Rhodes, D., Memaran, S., et al.. "Hall and field-effect mobilities in few layeredﾠp-WSe2ﾠfield-effect transistors." <i>Scientific Reports,</i> 5, (2015) Macmillan Publishers Limited: http://dx.doi.org/10.1038/srep08979.https://hdl.handle.net/1911/88657Here, we present a temperature (T) dependent comparison between field-effect and Hall mobilities in field-effect transistors based on few-layered WSe2 exfoliated onto SiO2. Without dielectric engineering and beyond a T-dependent threshold gate-voltage, we observe maximum hole mobilities approaching 350 cm(2)/Vs at T = 300 K. The hole Hall mobility reaches a maximum value of 650 cm(2)/Vs as T is lowered below ~150 K, indicating that insofar WSe2-based field-effect transistors (FETs) display the largest Hall mobilities among the transition metal dichalcogenides. The gate capacitance, as extracted from the Hall-effect, reveals the presence of spurious charges in the channel, while the two-terminal sheet resistivity displays two-dimensional variable-range hopping behavior, indicating carrier localization induced by disorder at the interface between WSe2 and SiO2. We argue that improvements in the fabrication protocols as, for example, the use of a substrate free of dangling bonds are likely to produce WSe2-based FETs displaying higher room temperature mobilities, i.e. approaching those of p-doped Si, which would make it a suitable candidate for high performance opto-electronics.engThis work is licensed under a Creative Commons Attribution 4.0 International License. The images or other third party material in this article are included in the article's Creative Commons license, unless indicated otherwise in the credit line; if the material is not included under the Creative Commons license, users will need to obtain permission from the license holder in order to reproduce the material.Journal articlehttp://dx.doi.org/10.1038/srep08979