Viana, Marcelo M.Lima, Meiriane C.F.S.Forsythe, Jerimiah C.Gangoli, Varun S.Cho, MinjungCheng, YinhongSilva, Glaura G.Wong, Michael S.Caliman, Vinicius2017-05-152017-05-152015Viana, Marcelo M., Lima, Meiriane C.F.S., Forsythe, Jerimiah C., et al.. "Facile Graphene Oxide Preparation by Microwave-Assisted Acid Method." <i>Journal of the Brazilian Chemical Society,</i> 26, no. 5 (2015) Sociedade Brasileira de Química: 978-984. http://dx.doi.org/10.5935/0103-5053.20150061.https://hdl.handle.net/1911/94260Few-layered graphene oxide (GO) was prepared using a fast and energy-saving method by microwave-assisted acid technique. The oxygenated groups existing on the GO surface were determined using UV-Vis, X-ray photoelectron and Fourier-transform infrared spectroscopies. An oxygenated group percentage of 30% in mass for the GO was observed by thermogravimetric analysis. The reduced few-layered graphene oxide (rGO) film annealed at 110 °C deposited onto a silicon/silica wafer showed expanded graphite-like structure with 0.70 nm between the rGO sheets, as determined by X-ray diffraction. This rGO film exhibited a relatively high electrical conductivity value of 7.36 × 102 S m-1 confirming the good restoration of the π-conjugated system. The prepared GO sample exhibited good stability in water from pH 4 to 12, as determined by its zeta potential, and contained 5 to 9 layers, as determined by atomic force microscopy (AFM) and transmission electron microscopy (TEM).engThis is an Open Access article distributed under the terms of the Creative Commons Attribution Non-Commercial License which permits unrestricted non-commercial use, distribution, and reproduction in any medium, provided the original work is properly cited.Journal articlemicrowave irradiationgraphene oxidefilmconductivityhttp://dx.doi.org/10.5935/0103-5053.20150061