2015-09-092015-09-092015-08-04Tour, James, Sun, Zhengzong, Yan, Zheng, Ruan, Gedeng and Peng, Zhiwei, "Growth of graphene films from non-gaseous carbon sources." Patent US9096437B2. issued 2015-08-04. Retrieved from <a href="https://hdl.handle.net/1911/81636">https://hdl.handle.net/1911/81636</a>.https://hdl.handle.net/1911/81636In various embodiments, the present disclosure provides methods of forming graphene films by: (1) depositing a non-gaseous carbon source onto a catalyst surface; (2) exposing the non-gaseous carbon source to at least one gas with a flow rate; and (3) initiating the conversion of the non-gaseous carbon source to the graphene film, where the thickness of the graphene film is controllable by the gas flow rate. Additional embodiments of the present disclosure pertain to graphene films made in accordance with the methods of the present disclosure.32engUtility patentUS9096437B2