Pradhan, N.R.Rhodes, D.Zhang, Q.Talapatra, S.Terrones, M.Ajayan, P.M.Balicas, L.2017-07-312017-07-312013Pradhan, N.R., Rhodes, D., Zhang, Q., et al.. "Intrinsic carrier mobility of multi-layered MoS2 field-effect transistors on SiO2." <i>Applied Physics Letters,</i> 102, no. 12 (2013) American Institute of Physics: http://dx.doi.org/10.1063/1.4799172.https://hdl.handle.net/1911/95627engArticle is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use.Journal articleIntrinsic_carrier_mobilityhttp://dx.doi.org/10.1063/1.4799172