2023-06-022023-06-022023-05-16Zheng, Bob Yi, Zhao, Hangqi, Cerjan, Benjamin, Tanzid, Mehbuba, Nordlander, Peter J. and Halas, Nancy J., "Infrared photodetectors." Patent US11652183B2. issued 2023-05-16. Retrieved from <a href="https://hdl.handle.net/1911/114900">https://hdl.handle.net/1911/114900</a>.https://hdl.handle.net/1911/114900An infrared photodetector includes: a p-type and highly-doped silicon substrate; a metal structure disposed on the silicon substrate; a first electric contact to the silicon substrate; and a second electric contact to the metal structure.15engUtility patentUS11652183B2