Ghahari, FereshteXie, Hong-YiTaniguchi, TakashiWatanabe, KenjiFoster, Matthew S.Kim, Philip2017-05-032017-05-032016Ghahari, Fereshte, Xie, Hong-Yi, Taniguchi, Takashi, et al.. "Enhanced Thermoelectric Power in Graphene: Violation of the Mott Relation by Inelastic Scattering." <i>Physical Review Letters,</i> 116, no. 13 (2016) American Physical Society: https://doi.org/10.1103/PhysRevLett.116.136802.https://hdl.handle.net/1911/94131We report the enhancement of the thermoelectric power (TEP) in graphene with extremely low disorder. At high temperature we observe that the TEP is substantially larger than the prediction of the Mott relation, approaching to the hydrodynamic limit due to strong inelastic scattering among the charge carriers. However, closer to room temperature the inelastic carrierﾖoptical-phonon scattering becomes more significant and limits the TEP below the hydrodynamic prediction. We support our observation by employing a Boltzmann theory incorporating disorder, electron interactions, and optical phonons.engArticle is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use.Journal articlehttps://doi.org/10.1103/PhysRevLett.116.136802