Liu, GuangtongZhang, ChiTsui, D.C.Knez, IvanLevine, AaronDu, R.R.Pfeiffer, L.N.West, K.W.2013-03-142013-03-142012Liu, Guangtong, Zhang, Chi, Tsui, D.C., et al.. "Enhancement of the v=5/2 Fractional Quantum Hall State in a Small In-Plane Magnetic Field." <i>Physical Review Letters,</i> 108, (2012) American Physical Society: 196805. http://dx.doi.org/10.1103/PhysRevLett.108.196805.https://hdl.handle.net/1911/70629Using a 50-nm-width ultraclean GaAs=AlGaAs quantum well, we have studied the Landau level filling factor v=5/2 fractional quantum Hall effect in a perpendicular magnetic field B 1:7 Tand determined its dependence on tilted magnetic fields. Contrary to all previous results, the 5=2 resistance minimum and the Hall plateau are found to strengthen continuously under an increasing tilt angle 0< <25 (corresponding to an in-plane magnetic field 0<Bk < 0:8 T). In the same range of , the activation gaps of both the 7=3 and the 8=3 states are found to increase with tilt. The 5=2 state transforms into a compressible Fermi liquid upon tilt angle >60 , and the composite fermion series [2 þ p=ð2p 1Þ, p ¼ 1; 2] can be identified. Based on our results, we discuss the relevance of a Skyrmion spin texture at v= 5/2 associated with small Zeeman energy in wide quantum wells, as proposed by Wo´js et alengArticle is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use.Journal articlehttp://dx.doi.org/10.1103/PhysRevLett.108.196805