Ghosh, S.Najmaei, S.Kar, S.Vajtai, R.Lou, J.Pradhan, N.R.Balicas, L.Ajayan, P.M.Talapatra, S.2014-04-142014-04-142014Ghosh, S., Najmaei, S., Kar, S., et al.. "Universal ac conduction in large area atomic layers of CVD-grown MoS2." <i>Physical Review B,</i> 89, (2014) American Physical Society: 125422. http://dx.doi.org/10.1103/PhysRevB.89.125422.https://hdl.handle.net/1911/75895Here, we report on the ac conductivity [σ’(ω); 10 mHz < ω < 0.1 MHz] measurements performed on atomically thin, two-dimensional layers of MoS2 grown by chemical vapor deposition (CVD). Σ’(ω) is observed to display a “universal” power law, i.e., σ’(ω) ∼ ωs measured within a broad range of temperatures, 10 K< T <340 K. The temperature dependence of ‘‘s” indicates that the dominant ac transport conduction mechanism in CVD-grown MoS2 is due to electron hopping through a quantum mechanical tunneling process. The ac conductivity also displays scaling behavior, which leads to the collapse of the ac conductivity curves obtained at various temperatures into a single master curve. These findings establish a basis for our understanding of the transport mechanism in atomically thin, CVD-grown MoS2 layers.engArticle is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use.Journal articlehttp://dx.doi.org/10.1103/PhysRevB.89.125422