Spanton, Eric M.Nowack, Katja C.Du, LingjieSullivan, GerardDu, Rui-RuiMoler, Kathryn A.2017-06-012017-06-012014Spanton, Eric M., Nowack, Katja C., Du, Lingjie, et al.. "Images of Edge Current inﾠInAs/GaSbﾠQuantum Wells." <i>Physical Review Letters,</i> 113, no. 2 (2014) American Physical Society: https://doi.org/10.1103/PhysRevLett.113.026804.https://hdl.handle.net/1911/94750Quantum spin Hall devices with edges much longer than several microns do not display ballistic transport; that is, their measured conductances are much less thanﾠe2/hﾠper edge. We imaged edge currents inﾠInAs/GaSbﾠquantum wells with long edges and determined an effective edge resistance. Surprisingly, although the effective edge resistance is much greater thanﾠh/e2, it is independent of temperature up to 30ﾠK within experimental resolution. Known candidate scattering mechanisms do not explain our observation of an effective edge resistance that is large yet temperature independent.engArticle is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use.Journal articlehttps://doi.org/10.1103/PhysRevLett.113.026804